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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
BSC076N06NS3GATMA1 DISTI # BSC076N06NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
BSZ076N06NS3GATMA1 DISTI # BSZ076N06NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 20A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call |
|
BSZ076N06NS3GATMA1 DISTI # BSZ076N06NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 20A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
BSC076N06NS3GATMA1 DISTI # BSC076N06NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
BSC076N06NS3GATMA1 DISTI # BSC076N06NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
BSC076N06NS3G DISTI # BSC076N06NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: BSC076N06NS3 G) RoHS: Compliant Min Qty: 5000 | Asia - 0 |
|
BSC076N06NS3G DISTI # SP000453656 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: SP000453656) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
BSC076N06NS3GXT DISTI # BSC076N06NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC076N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
BSZ076N06NS3GXT DISTI # BSZ076N06NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
BSZ076N06NS3GATMA1 DISTI # SP000454420 | Infineon Technologies AG | Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R (Alt: SP000454420) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
BSC076N06NS3GATMA1. DISTI # 25AC6433 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:69W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
BSC076N06NS3GATMA1 DISTI # 47Y7996 | Infineon Technologies AG | MOSFET Transistor, N Channel, 50 A, 60 V, 0.0062 ohm, 10 V, 3 V RoHS Compliant: Yes | 0 |
|
BSZ076N06NS3GATMA1 DISTI # 47W3362 | Infineon Technologies AG | MOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 9493 |
|
BSZ076N06NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 16557 |
|
BSZ076N06NS3GATMA1 | Infineon Technologies AG | RoHS: Not Compliant | 2600 |
|
BSC076N06NS3GATMA1 DISTI # 726-BSC076N06NS3GATM | Infineon Technologies AG | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 296 |
|
BSC076N06NS3 G DISTI # 726-BSC076N06NS3G | Infineon Technologies AG | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 124 |
|
BSZ076N06NS3 G DISTI # 726-BSZ076N06NS3G | Infineon Technologies AG | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 | |
BSZ076N06NS3GATMA1 DISTI # N/A | Infineon Technologies AG | MOSFET MV POWER MOS | 0 | |
BSC076N06NS3GXT | Infineon Technologies AG | 84 | ||
BSZ076N06NS3GATMA1 | Infineon Technologies AG | 2809 | ||
BSC076N06NS3GATMA1 DISTI # 8259137P | Infineon Technologies AG | MOSFET N-CH 50A 60V OPTIMOS3 TDSON8EP, RL | 15340 |
|
BSC076N06NS3 G DISTI # TMOSP9022 | Infineon Technologies AG | N-CH60V50A7.6mOhm TDSON-8 RoHS: Compliant | Stock DE - 0Stock US - 0 |
|
BSZ076N06NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 5000 | |
BSC076N06NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2175 | |
BSZ076N06NS3G | Infineon Technologies AG | 5444 | ||
BSC076N06NS3 G | Infineon Technologies AG | 695 | ||
BSC076N06NS3GATMA1 DISTI # 2443422 | Infineon Technologies AG | MOSFET, N CH, 60V, 50A, TDSON-8 RoHS: Compliant | 0 |
|
BSZ076N06NS3GATMA1 DISTI # 2212829 | Infineon Technologies AG | MOSFET, N-CH, 60V, 20A, 8TSDSON RoHS: Compliant | 9493 |
|
BSC076N06NS3GATMA1 DISTI # 2443422 | Infineon Technologies AG | MOSFET, N CH, 60V, 50A, TDSON-8 RoHS: Compliant | 0 |
|
BSZ076N06NS3GATMA1 DISTI # 2212829 | Infineon Technologies AG | MOSFET, N-CH, 60V, 20A, 8TSDSON RoHS: Compliant | 9613 |
|
BSC076N06NS3 G | Infineon Technologies AG | RoHS(ship within 1day) | 600 |
|
Image | Part # | Description |
---|---|---|
Mfr.#: 076N06N OMO.#: OMO-076N06N-1190 |
New and Original | |
Mfr.#: 076N06NS OMO.#: OMO-076N06NS-1190 |
New and Original | |
Mfr.#: 076N06NS/BSC076N06NS3 |
New and Original | |
Mfr.#: 076N06NS3 OMO.#: OMO-076N06NS3-1190 |
New and Original | |
Mfr.#: 076N06NS3G OMO.#: OMO-076N06NS3G-1190 |
New and Original | |
Mfr.#: 076N12N OMO.#: OMO-076N12N-1190 |
New and Original |