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Part # | Mfg. | Description | Stock | Price |
---|---|---|---|---|
BSC076N06NS3GATMA1 DISTI # BSC076N06NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 63409In Stock |
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BSC076N06NS3GATMA1 DISTI # BSC076N06NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 63409In Stock |
|
BSC076N06NS3GATMA1 DISTI # BSC076N06NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 60000In Stock |
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BSZ076N06NS3GATMA1 DISTI # BSZ076N06NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 20A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call |
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BSZ076N06NS3GATMA1 DISTI # BSZ076N06NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 20A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
BSC076N06NS3G DISTI # BSC076N06NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: BSC076N06NS3 G) RoHS: Compliant Min Qty: 5000 | Asia - 0 |
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BSC076N06NS3G DISTI # SP000453656 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: SP000453656) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
BSC076N06NS3GXT DISTI # BSC076N06NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC076N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
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BSZ076N06NS3GXT DISTI # BSZ076N06NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
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BSZ076N06NS3GATMA1 DISTI # BSZ076N06NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Bulk (Alt: BSZ076N06NS3GATMA1) Min Qty: 782 Container: Bulk | Americas - 0 |
|
BSZ076N06NS3GATMA1 DISTI # SP000454420 | Infineon Technologies AG | Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R (Alt: SP000454420) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Europe - 0 |
|
BSZ076N06NS3GATMA1 DISTI # 47W3362 | Infineon Technologies AG | MOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 8543 |
|
BSC076N06NS3GATMA1. DISTI # 25AC6433 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:69W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
BSC076N06NS3GATMA1 DISTI # 47Y7996 | Infineon Technologies AG | MOSFET Transistor, N Channel, 50 A, 60 V, 0.0062 ohm, 10 V, 3 V RoHS Compliant: Yes | 14400 |
|
BSC076N06NS3GATMA1 DISTI # 726-BSC076N06NS3GATM | Infineon Technologies AG | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 21380 |
|
BSC076N06NS3 G DISTI # 726-BSC076N06NS3G | Infineon Technologies AG | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 10295 |
|
BSZ076N06NS3 G DISTI # 726-BSZ076N06NS3G | Infineon Technologies AG | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 | |
BSZ076N06NS3GATMA1 DISTI # N/A | Infineon Technologies AG | MOSFET MV POWER MOS | 0 | |
BSC076N06NS3GATMA1 | Infineon Technologies AG | Single N-Channel 60 V 7.6 mOhm 50 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant | 10000Reel |
|
BSZ076N06NS3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 2600 |
|
BSZ076N06NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant | 16557 |
|
BSZ076N06NS3GATMA1 | Infineon Technologies AG | 2809 | ||
BSC076N06NS3GATMA1 DISTI # 8259137P | Infineon Technologies AG | MOSFET N-CH 50A 60V OPTIMOS3 TDSON8EP, RL | 13740 |
|
BSC076N06NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2175 | |
BSZ076N06NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 | |
BSC076N06NS3 G DISTI # TMOSP9022 | Infineon Technologies AG | N-CH60V50A7.6mOhm TDSON-8 RoHS: Compliant | Stock DE - 5000Stock HK - 0Stock US - 0 |
|
BSZ076N06NS3GATMA1 DISTI # 2212829 | Infineon Technologies AG | MOSFET, N-CH, 60V, 20A, 8TSDSON RoHS: Compliant | 8516 |
|
BSC076N06NS3GATMA1 DISTI # 2443422 | Infineon Technologies AG | MOSFET, N CH, 60V, 50A, TDSON-8 RoHS: Compliant | 14400 |
|
BSC076N06NS3 G DISTI # C1S322000304765 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP RoHS: Compliant | 4280 |
|
BSC076N06NS3GATMA1 DISTI # XSFP00000040924 | Infineon Technologies AG | RoHS: Compliant | 10000 in Stock0 on Order |
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BSC076N06NS3 G | Infineon Technologies AG | RoHS(ship within 1day) | 580 |
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BSZ076N06NS3GATMA1 DISTI # 2212829 | Infineon Technologies AG | MOSFET, N-CH, 60V, 20A, 8TSDSON | 8531 |
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BSC076N06NS3GATMA1 DISTI # 2443422 | Infineon Technologies AG | MOSFET, N CH, 60V, 50A, TDSON-8 | 19390 |
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Image | Part # | Description |
---|---|---|
Mfr.#: 076N06N OMO.#: OMO-076N06N-1190 |
New and Original | |
Mfr.#: 076N06NS OMO.#: OMO-076N06NS-1190 |
New and Original | |
Mfr.#: 076N06NS/BSC076N06NS3 |
New and Original | |
Mfr.#: 076N06NS3 OMO.#: OMO-076N06NS3-1190 |
New and Original | |
Mfr.#: 076N06NS3G OMO.#: OMO-076N06NS3G-1190 |
New and Original |