A2T18H160-24SR3

A2T18H160-24SR3
Mfr. #:
A2T18H160-24SR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
Lifecycle:
New from this manufacturer.
Datasheet:
A2T18H160-24SR3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2T18H160-24SR3 DatasheetA2T18H160-24SR3 Datasheet (P4-P6)A2T18H160-24SR3 Datasheet (P7-P9)A2T18H160-24SR3 Datasheet (P10-P12)A2T18H160-24SR3 Datasheet (P13-P15)A2T18H160-24SR3 Datasheet (P16)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
600 mA, 1 A
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 65 V
Gain:
17.9 dB
Output Power:
28 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
NI-780S-4L2L-6
Packaging:
Reel
Operating Frequency:
1.805 GHz to 1.88 GHz
Type:
RF Power MOSFET
Brand:
NXP / Freescale
Number of Channels:
2 Channel
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Part # Aliases:
935316045128
Unit Weight:
0.164793 oz
Tags
A2T18H1, A2T18H, A2T18, A2T1, A2T
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
***W
RF Power Transistor,1805 to 1880 MHz, 126 W, Typ Gain in dB is 17.9 @ 1805 MHz, 28 V, LDMOS, SOT1799
***et Europe
A2T18H160-24S/CFM6F/REEL 13" Q
Part # Mfg. Description Stock Price
A2T18H160-24SR3
DISTI # A2T18H160-24SR3-ND
NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 250:$92.3116
A2T18H160-24SR3
DISTI # A2T18H160-24SR3
Avnet, Inc.A2T18H160-24S/CFM6F/REEL 13" Q - Tape and Reel (Alt: A2T18H160-24SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Americas - 0
  • 250:$101.0900
  • 500:$97.1900
  • 1000:$93.3900
  • 1500:$89.9900
  • 2500:$88.2900
A2T18H160-24SR3
DISTI # A2T18H160-24SR3
Avnet, Inc.A2T18H160-24S/CFM6F/REEL 13" Q (Alt: A2T18H160-24SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel
Asia - 0
  • 250:$99.1531
  • 500:$96.3989
  • 750:$93.7935
  • 1250:$91.3253
  • 2500:$90.1392
  • 6250:$88.9836
  • 12500:$86.7590
A2T18H160-24SR3
DISTI # A2T18H160-24SR3
Avnet, Inc.A2T18H160-24S/CFM6F/REEL 13" Q (Alt: A2T18H160-24SR3)
RoHS: Compliant
Min Qty: 1
Container: Reel
Europe - 0
  • 1:€92.8900
  • 10:€91.1900
  • 25:€88.3900
  • 50:€85.4900
  • 100:€84.9900
  • 500:€84.3900
  • 1000:€83.3900
A2T18H160-24SR3
DISTI # 841-A2T18H160-24SR3
NXP SemiconductorsRF MOSFET Transistors A2T18H160-24S/CFM6F///REEL 13 Q2 NDP
RoHS: Compliant
0
  • 250:$90.2400
A2T18H160-24SR3
DISTI # A2T18H160-24SR3
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
166
  • 1:$116.0600
  • 10:$107.2600
  • 25:$104.1100
Image Part # Description
A2T18H100-25SR3

Mfr.#: A2T18H100-25SR3

OMO.#: OMO-A2T18H100-25SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V
A2T18H160-24SR3

Mfr.#: A2T18H160-24SR3

OMO.#: OMO-A2T18H160-24SR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
A2T18H100-25SR3

Mfr.#: A2T18H100-25SR3

OMO.#: OMO-A2T18H100-25SR3-NXP-SEMICONDUCTORS

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V
A2T18H160-24SR3

Mfr.#: A2T18H160-24SR3

OMO.#: OMO-A2T18H160-24SR3-NXP-SEMICONDUCTORS

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 28 W Avg, 28 V
A2T18H160-24S

Mfr.#: A2T18H160-24S

OMO.#: OMO-A2T18H160-24S-1190

New and Original
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of A2T18H160-24SR3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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