SI4816BDY-T1-GE3

Mfr. #:: SI4816BDY-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET 2N-CH 30V 5.8A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: SI4816BDY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SI4816BDY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: Vishay

Product Category: FETs - Arrays

Series: LITTLE FOOTR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI4816DY-T1-E3-S

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: 8-SO

Configuration: Dual with Schottky Diode

FET-Type: 2 N-Channel (Half Bridge)

Power-Max: 1W, 1.25W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

Input-Capacitance-Ciss-Vds: -

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 5.8A, 8.2A

Rds-On-Max-Id-Vgs: 18.5 mOhm @ 6.8A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 10nC @ 5V

Pd-Power-Dissipation: 1 W 1.25 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 9 ns

Rise-Time: 9 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 5.8 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistance: 15.5 mOhms 9.3 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 24 ns 31 ns

Typical-Turn-On-Delay-Time: 11 ns 13 ns

Channel-Mode: Enhancement

Tags: SI4816BDY-T, SI4816BD, SI4816B, SI4816, SI481, SI48, SI4

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4816BDY-T1-GE3 Description

***ure Electronics: Dual N-Channel 30 V 0.0185/0.0115 O 10 nC Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R

***nell: MOSFET, NN CH, 30V, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

SI4816BDY-T1-GE3 More Information

SkyFET® Power MOSFETs: Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4816BDY-T1-GE3 DISTI # V72:2272_09216580	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R RoHS: Compliant	2370	1000:$0.5306 500:$0.8441 250:$0.9448 100:$0.9467 25:$1.1658 10:$1.1691 1:$1.3618
SI4816BDY-T1-GE3 DISTI # V36:1790_09216580	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	321In Stock	1000:$0.9253 500:$1.1055 100:$1.4057 10:$1.7360 1:$1.9100
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	321In Stock	1000:$0.9253 500:$1.1055 100:$1.4057 10:$1.7360 1:$1.9100
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.7950 5000:$0.8109 2500:$0.8400
SI4816BDY-T1-GE3 DISTI # 32378715	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R RoHS: Compliant	2370	1000:$0.5704 500:$0.9074 250:$1.0157 100:$1.0177 25:$1.2532 15:$1.2568
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R (Alt: SI4816BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7209 5000:€0.4919 10000:€0.4229 15000:€0.3909 25000:€0.3639
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R (Alt: SI4816BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4816BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.7709 5000:$0.7479 10000:$0.7179 15000:$0.6979 25000:$0.6789
SI4816BDY-T1-GE3 DISTI # 26R1889	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 30V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	500:$0.9280 250:$0.9940 100:$1.0600 50:$1.1600 25:$1.2700 10:$1.3700 1:$1.6500
SI4816BDY-T1-GE3 DISTI # 15R5082	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	10000:$0.6630 6000:$0.6890 4000:$0.7160 2000:$0.7950 1000:$0.8380 1:$0.8910
SI4816BDY-T1-GE3 DISTI # 78Y6742	Vishay Intertechnologies	MOSFET, NN CH, 30V, 8SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation, RoHS Compliant: Yes	1785	500:$1.1400 250:$1.2100 100:$1.2900 50:$1.4000 25:$1.5100 10:$1.6200 1:$1.9200
SI4816BDY-T1-GE3 DISTI # 781-SI4816BDY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	818	1:$1.6400 10:$1.3600 100:$1.0600 500:$0.9280
SI4816BDY-T1-GE3	Vishay Intertechnologies	RoHS: Compliant	2380Cut Tape/Mini-Reel	1:$0.9050 50:$0.6550 100:$0.6150 250:$0.5700 500:$0.4700
SI4816BDY-T1-GE3	Vishay Intertechnologies	Dual N-Channel 30 V 0.0185/0.0115 O 10 nC Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant	17500Reel	2500:$0.4250
SI4816BDY-T1-GE3 DISTI # TMOSP10764	Vishay Intertechnologies	DUAL30V 6,8A 18,5mOhm SO-8 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	2500:$0.5497
SI4816BDY-T1-GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 2500
SI4816BDY-T1-GE3	Vishay Intertechnologies	INSTOCK	910
SI4816BDY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 2500
SI4816BDY-T1-GE3 DISTI # 2101479	Vishay Intertechnologies	MOSFET, NN CH, 30V, 8SOIC RoHS: Compliant	2290	500:£0.7290 250:£0.7810 100:£0.8330 25:£1.0700 5:£1.1700
SI4816BDY-T1-GE3 DISTI # 2101479	Vishay Intertechnologies	MOSFET, NN CH, 30V, 8SOIC RoHS: Compliant	1807	2500:$1.3800 500:$1.4000 100:$1.6000 10:$2.0500 1:$2.4700
SI4816BDY-T1-GE3 DISTI # XSFR00000009895	Vishay Intertechnologies	RoHS: Compliant	0 in Stock0 on Order
SI4816BDY-T1-GE3 DISTI # XSFP00000102898	Vishay Siliconix	RoHS: Compliant	16286 in Stock0 on Order	16286:$1.6500 2500:$1.8100

Image	Part #	Description
	Mfr.#: SI4816BDY-T1-E3 OMO.#: OMO-SI4816BDY-T1-E3	MOSFET 30V Vds 20V Vgs SO-8
	Mfr.#: SI4816BDY-T1-GE3 OMO.#: OMO-SI4816BDY-T1-GE3	MOSFET 30V Vds 20V Vgs SO-8
	Mfr.#: SI4816BDY-T1-E3-CUT TAPE OMO.#: OMO-SI4816BDY-T1-E3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4816BDY-T1-GE3-CUT TAPE OMO.#: OMO-SI4816BDY-T1-GE3-CUT-TAPE-1190	New and Original
	Mfr.#: SI4816BDY OMO.#: OMO-SI4816BDY-1190	New and Original
	Mfr.#: SI4816BDY-T1-GE3 OMO.#: OMO-SI4816BDY-T1-GE3-VISHAY	MOSFET 2N-CH 30V 5.8A 8-SOIC
	Mfr.#: SI4816BDY-T1-E3 OMO.#: OMO-SI4816BDY-T1-E3-VISHAY	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R

SI4816BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes