IPD180N10N

Mfr. #:: IPD180N10N
Manufacturer:: Infineon Technologies
Description:
Lifecycle:: New from this manufacturer.
Datasheet:: IPD180N10N Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Infineon Technologies

Product Category: FETs - Single

Series: OptiMOS

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: IPD180N10N3GBTMA1 IPD180N10N3GXT SP000482438

Unit-Weight: 0.139332 oz

Mounting-Style: SMD/SMT

Package-Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Technology: Si

Operating-Temperature: -55°C ~ 175°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: PG-TO252-3

Configuration: Single

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 71W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

Input-Capacitance-Ciss-Vds: 1800pF @ 50V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 43A (Tc)

Rds-On-Max-Id-Vgs: 18 mOhm @ 33A, 10V

Vgs-th-Max-Id: 3.5V @ 33μA

Gate-Charge-Qg-Vgs: 25nC @ 10V

Pd-Power-Dissipation: 71 W

Maximum-Operating-Temperature: + 175 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 5 ns

Rise-Time: 12 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 43 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Rds-On-Drain-Source-Resistance: 18 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 19 ns

Typical-Turn-On-Delay-Time: 12 ns

Channel-Mode: Enhancement

Tags: IPD18, IPD1, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Part #	Mfg.	Description	Stock	Price
IPD180N10N3GATMA1 DISTI # V72:2272_09156944	Infineon Technologies AG	MV POWER MOS	1850	1000:$0.4258 500:$0.5137 250:$0.5657 100:$0.5675 25:$0.6906 10:$0.6937 1:$0.7809
IPD180N10N3GATMA1 DISTI # IPD180N10N3GATMA1TR-ND	Infineon Technologies AG	MV POWER MOS RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.4813
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 43A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 43A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 43A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPD180N10N3GATMA1 DISTI # IPD180N10N3GATMA1CT-ND	Infineon Technologies AG	MV POWER MOS RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5311 500:$0.6727 100:$0.8675 10:$1.0980 1:$1.2400
IPD180N10N3GATMA1 DISTI # IPD180N10N3GATMA1DKR-ND	Infineon Technologies AG	MV POWER MOS RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5311 500:$0.6727 100:$0.8675 10:$1.0980 1:$1.2400
IPD180N10N3GATMA1 DISTI # 26196098	Infineon Technologies AG	MV POWER MOS	1850	21:$0.7816
IPD180N10N3 G DISTI # IPD180N10N3 G	Infineon Technologies AG	Trans MOSFET N-CH 100V 43A 3-Pin TO-252 T/R (Alt: IPD180N10N3 G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 12500	2500:$0.4992 5000:$0.4787 7500:$0.4722 12500:$0.4538 25000:$0.4480 62500:$0.4368 125000:$0.4261
IPD180N10N3GATMA1 DISTI # IPD180N10N3GATMA1	Infineon Technologies AG	MV POWER MOS - Tape and Reel (Alt: IPD180N10N3GATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3599 5000:$0.3469 10000:$0.3339 15000:$0.3229 25000:$0.3169
IPD180N10N3GBTMA1 DISTI # IPD180N10N3GBTMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD180N10N3GBTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3599 5000:$0.3469 10000:$0.3339 15000:$0.3229 25000:$0.3169
IPD180N10N3GATMA1 DISTI # 47Y8049	Infineon Technologies AG	MOSFET Transistor, N Channel, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V , RoHS Compliant: Yes	0
IPD180N10N3GATMA1 DISTI # 726-IPD180N10N3GATMA	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	251	1:$1.0300 10:$0.8750 100:$0.6720 500:$0.5940 1000:$0.4690 2500:$0.4160
IPD180N10N3GBTMA1 DISTI # 726-IPD180N10N3GBTMA	Infineon Technologies AG	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 RoHS: Compliant	0	1:$1.0300 10:$0.8750 100:$0.6720 500:$0.5940 1000:$0.4690 2500:$0.4160 10000:$0.4010
IPD180N10N3 G DISTI # 726-IPD180N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 RoHS: Compliant	0	1:$1.0300 10:$0.8750 100:$0.6720 500:$0.5940 1000:$0.4690 2500:$0.4160 10000:$0.4010
IPD180N10N3G	Infineon Technologies AG	Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	116	1000:$0.4600 500:$0.4800 100:$0.5000 25:$0.5200 1:$0.5600
IPD180N10N3GBTMA1	Infineon Technologies AG	Power Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	166	1000:$0.4400 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5400
IPD180N10N3G	Infineon Technologies AG	INSTOCK	622
IPD180N10N3GATMA1 DISTI # 2443433	Infineon Technologies AG	MOSFET, N CH, 100V, 43A, TO-252-3 RoHS: Compliant	0	1:$1.6300 10:$1.3900 100:$1.0700 500:$0.9400 1000:$0.7430 2500:$0.6670
IPD180N10N3GBTMA1 DISTI # 2617464	Infineon Technologies AG	MOSFET, N-CH, 100V, 43A, TO-252-3 RoHS: Compliant	0	1:$1.4900 10:$1.2300 100:$0.9930 250:$0.8880 500:$0.7870 1000:$0.7320

Image	Part #	Description
	Mfr.#: IPD180N10N3GATMA1 OMO.#: OMO-IPD180N10N3GATMA1	MOSFET MV POWER MOS
	Mfr.#: IPD180N10N3GBTMA1 OMO.#: OMO-IPD180N10N3GBTMA1	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
	Mfr.#: IPD180N10N3 G OMO.#: OMO-IPD180N10N3-G	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
	Mfr.#: IPD180N10N3GBTMA1 OMO.#: OMO-IPD180N10N3GBTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 43A TO252-3
	Mfr.#: IPD180N10N3GATMA1 OMO.#: OMO-IPD180N10N3GATMA1-INFINEON-TECHNOLOGIES	MV POWER MOS
	Mfr.#: IPD180N10N3GATMA1-CUT TAPE OMO.#: OMO-IPD180N10N3GATMA1-CUT-TAPE-1190	New and Original
	Mfr.#: IPD180N10N OMO.#: OMO-IPD180N10N-1190	New and Original
	Mfr.#: IPD180N10N3 G OMO.#: OMO-IPD180N10N3-G-1190	MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
	Mfr.#: IPD180N10N3GATMA1 , 2SD2 OMO.#: OMO-IPD180N10N3GATMA1-2SD2-1190	New and Original
	Mfr.#: IPD180N10N3G OMO.#: OMO-IPD180N10N3G-124	Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3

IPD180N10N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes