 | | | |
| PartNumber | IPD180N10N3GATMA1 | IPD180N10N3GBTMA1 | IPD180N10N3 G |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 | MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | G IPD180N10N3 SP000900132 | G IPD180N10N3 IPD18N1N3GXT SP000482438 | IPD180N10N3GBTMA1 IPD18N1N3GXT SP000482438 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 100 V | 100 V |
| Id Continuous Drain Current | - | 43 A | 43 A |
| Rds On Drain Source Resistance | - | 14.7 mOhms | 14.7 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 25 nC | 25 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 71 W | 71 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | OptiMOS | - |
| Series | - | XPD180N10 | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 20 S | 20 S |
| Fall Time | - | 5 ns | 5 ns |
| Rise Time | - | 12 ns | 12 ns |
| Typical Turn Off Delay Time | - | 19 ns | 19 ns |
| Typical Turn On Delay Time | - | 12 ns | 12 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD180N10N3GATMA1 | MOSFET MV POWER MOS | |
| IPD180N10N3GBTMA1 | MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 | ||
| IPD180N10N3 G | MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 | ||
| IPD180N10N3GBTMA1 | MOSFET N-CH 100V 43A TO252-3 | ||
| IPD180N10N3GATMA1 | MV POWER MOS | ||
| IPD180N10N3GATMA1-CUT TAPE | New and Original | ||
| IPD180N10N | New and Original | ||
| IPD180N10N3 G | MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 | ||
| IPD180N10N3GATMA1 , 2SD2 | New and Original | ||
| IPD180N10N3GBTMA1 , 2SD2 | New and Original | ||
| IPD180N10N3G | Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3 |