IRG4BC30FPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-220-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

1.59 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

31 A

Pd - Power Dissipation:

100 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Tube

Continuous Collector Current Ic Max:

31 A

Height:

8.77 mm

Length:

10.54 mm

Width:

4.69 mm

Brand:

Infineon Technologies

Gate-Emitter Leakage Current:

100 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

1000

Subcategory:

IGBTs

Part # Aliases:

SP001541932

Unit Weight:

0.211644 oz

Tags

IRG4BC30F, IRG4BC3, IRG4BC, IRG4B, IRG4, IRG