IRF6637TRPBF

IRF6637TRPBF
Mfr. #:
IRF6637TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF6637TRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6637TRPBF DatasheetIRF6637TRPBF Datasheet (P4-P6)IRF6637TRPBF Datasheet (P7-P9)IRF6637TRPBF Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DirectFET-MP
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
14 A
Rds On - Drain-Source Resistance:
8.2 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
11 nC
Pd - Power Dissipation:
89 W
Configuration:
Single
Packaging:
Reel
Height:
0.7 mm
Length:
6.35 mm
Transistor Type:
1 N-Channel
Width:
5.05 mm
Brand:
Infineon Technologies
Moisture Sensitive:
Yes
Product Type:
MOSFET
Factory Pack Quantity:
4800
Subcategory:
MOSFETs
Part # Aliases:
SP001532298
Tags
IRF6637T, IRF6637, IRF663, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 7.7 mOhm 11 nC HEXFET® Power Mosfet - DirectFET®
***ark
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On-Resistance, Rds(on):7.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MP RoHS Compliant: No
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 52 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ure Electronics
Single N-Channel 30 V 7.3 mOhm 11 nC HEXFET® Power Mosfet - DirectFET®
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N-CH MOSFET, HEXFET, 30V, 14A, DIRECTFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance
***ure Electronics
Single N-Channel 30 V 5.1 mOhm 9.2 nC HEXFET® Power Mosfet - DirectFET®
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 7.7 mOhm 17 nC HEXFET® Power Mosfet - DirectFET®
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N Channel, MOSFET, 30V, 14A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V ;RoHS Compliant: Yes
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N CH, 30V, 75A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***et
Trans MOSFET N-CH 30V 61A 5-Pin(4+Tab) LFPAK T/R
*** Americas
STANDARD MARKING * REEL PACK, SMD, 7'
Part # Mfg. Description Stock Price
IRF6637TRPBF
DISTI # IRF6637TRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 14A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4800:$0.7242
IRF6637TRPBF
DISTI # IRF6637TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 14A 7-Pin Direct-FET MP T/R - Tape and Reel (Alt: IRF6637TRPBF)
RoHS: Compliant
Min Qty: 4800
Container: Reel
Americas - 0
  • 4800:$0.7129
  • 9600:$0.6869
  • 19200:$0.6619
  • 28800:$0.6399
  • 48000:$0.6279
IRF6637TRPBF
DISTI # SP001532298
Infineon Technologies AGTrans MOSFET N-CH 30V 14A 7-Pin Direct-FET MP T/R (Alt: SP001532298)
RoHS: Compliant
Min Qty: 4800
Container: Tape and Reel
Europe - 0
  • 4800:€0.8999
  • 9600:€0.7359
  • 19200:€0.6749
  • 28800:€0.6229
  • 48000:€0.5779
IRF6637TRPBF
DISTI # 70019577
Infineon Technologies AGA 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MP PACKAGERATED AT 52
RoHS: Compliant
0
  • 4800:$1.3610
  • 9600:$1.3340
  • 24000:$1.2930
IRF6637TRPBF
DISTI # 942-IRF6637TRPBF
Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
RoHS: Compliant
0
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.0700
  • 500:$0.9410
  • 1000:$0.7430
  • 2500:$0.6590
  • 4800:$0.6590
  • 9600:$0.6340
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IRF6633ATR1PBF

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Mfr.#: IRF6637TR1

OMO.#: OMO-IRF6637TR1-INFINEON-TECHNOLOGIES

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IRF6638TR1PBF

Mfr.#: IRF6638TR1PBF

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IRF6638TRPBF

Mfr.#: IRF6638TRPBF

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IRF6631TRPBF

Mfr.#: IRF6631TRPBF

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RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
Availability
Stock:
Available
On Order:
4500
Enter Quantity:
Current price of IRF6637TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.63
$1.63
10
$1.39
$13.90
100
$1.07
$107.00
500
$0.94
$470.50
1000
$0.74
$743.00
2500
$0.66
$1 647.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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