IRFH5215TR2PBF

IRFH5215TR2PBF
Mfr. #:
IRFH5215TR2PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 150V 27A 58mOhm 20nC Qg
Lifecycle:
New from this manufacturer.
Datasheet:
IRFH5215TR2PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PQFN-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
5 A
Rds On - Drain-Source Resistance:
58 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
20 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3.6 W
Configuration:
Single
Packaging:
Reel
Height:
0.83 mm
Length:
6 mm
Transistor Type:
1 N-Channel
Width:
5 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
21 S
Fall Time:
2.9 ns
Product Type:
MOSFET
Rise Time:
6.3 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Part # Aliases:
SP001565794
Unit Weight:
0.017637 oz
Tags
IRFH521, IRFH52, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package
***et
Trans MOSFET N-CH 150V 5A 8-Pin PQFN T/R
***ment14 APAC
MOSFET,W DIODE,N CH,150V,5A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0455ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V
Part # Mfg. Description Stock Price
IRFH5215TR2PBF
DISTI # IRFH5215TR2PBFCT-ND
Infineon Technologies AGMOSFET N-CH 150V 5.0A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IRFH5215TR2PBF
    DISTI # IRFH5215TR2PBFDKR-ND
    Infineon Technologies AGMOSFET N-CH 150V 5.0A PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IRFH5215TR2PBF
      DISTI # 942-IRFH5215TR2PBF
      Infineon Technologies AGMOSFET MOSFT 150V 27A 58mOhm 20nC Qg
      RoHS: Compliant
      0
        IRFH5215TR2PBFInternational Rectifier 
        RoHS: Compliant
        Europe - 400
          Image Part # Description
          IRFH5215TRPBF

          Mfr.#: IRFH5215TRPBF

          OMO.#: OMO-IRFH5215TRPBF

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          Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0126ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Diss
          IRFH5215TR2PBF

          Mfr.#: IRFH5215TR2PBF

          OMO.#: OMO-IRFH5215TR2PBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 150V 5.0A PQFN
          IRFH5215TRPBF

          Mfr.#: IRFH5215TRPBF

          OMO.#: OMO-IRFH5215TRPBF-INFINEON-TECHNOLOGIES

          IGBT Transistors MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC
          Availability
          Stock:
          Available
          On Order:
          4500
          Enter Quantity:
          Current price of IRFH5215TR2PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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