IPB06N03LA G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

25 V

Id - Continuous Drain Current:

50 A

Rds On - Drain-Source Resistance:

9.5 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

83 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

4.4 mm

Length:

10 mm

Transistor Type:

1 N-Channel

Width:

9.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

58 S / 29 S

Fall Time:

4.4 ns

Product Type:

MOSFET

Rise Time:

30 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

11 ns

Unit Weight:

0.139332 oz

Tags

IPB06N03LA, IPB06N03L, IPB06N, IPB06, IPB0, IPB