IPB06

IPB065N03LGATMA1 vs IPB060N15N5ATMA1 vs IPB065N06L G

 
PartNumberIPB065N03LGATMA1IPB060N15N5ATMA1IPB065N06L G
DescriptionMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3MOSFET DIFFERENTIATED MOSFETSMOSFET N-CH 60V 80A D2PAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-7-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V150 V-
Id Continuous Drain Current50 A136 A-
Rds On Drain Source Resistance5.4 mOhms4.8 mOhms-
Vgs th Gate Source Threshold Voltage1 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge11 nC68 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation56 W250 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min34 S53 S-
Fall Time3.4 ns4.1 ns-
Product TypeMOSFETMOSFET-
Rise Time4.2 ns4.3 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns22.2 ns-
Typical Turn On Delay Time5.5 ns14.9 ns-
Part # AliasesG IPB065N03L IPB65N3LGXT SP000254709IPB060N15N5 SP001607814-
Unit Weight0.139332 oz0.051500 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPB065N03LGATMA1 MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
IPB065N15N3GATMA1 MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
IPB067N08N3 G MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
IPB065N10N3GATMA1 MOSFET MV POWER MOS
IPB065N15N3 G MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
IPB060N15N5ATMA1 MOSFET DIFFERENTIATED MOSFETS
IPB060N15N5ATMA1 MOSFET N-CH 150V 136A TO263-7
IPB065N10N3GATMA1 MOSFET N-CH TO263-3
IPB06N03LB G MOSFET N-CH 30V 50A D2PAK
IPB06P001LATMA1 TRENCH 40<-<100V
IPB065N03LGATMA1 MOSFET N-CH 30V 50A TO-263-3
IPB065N06L G MOSFET N-CH 60V 80A D2PAK
IPB065N15N3GATMA1 MOSFET N-CH 150V 130A TO263-7
IPB065N15N3GE8187ATMA1 MOSFET N-CH 150V 130A TO263-7
IPB067N08N3GATMA1 MOSFET N-CH 80V 80A TO263-3
IPB06CN10N G MOSFET N-CH 100V 100A TO263-3
IPB06N03LA MOSFET N-CH 25V 50A D2PAK
IPB06N03LA G MOSFET N-CH 25V 50A D2PAK
IPB06N03LAT MOSFET N-CH 25V 50A D2PAK
IPB06N03LB MOSFET N-CH 30V 50A D2PAK
Infineon Technologies
Infineon Technologies
IPB06N03LA G MOSFET N-Ch 25V 50A D2PAK-2
IPB065N10N3GATMA1-CUT TAPE New and Original
IPB065N15N3GATMA1-CUT TAPE New and Original
IPB06N03LBG New and Original
IPB065N15N3GXT Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB065N15N3GATMA1)
IPB065N15N3GE818XT MOSFET
IPB0630-4R7M New and Original
IPB065N03L G MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
IPB065N03LG Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB065N06L New and Original
IPB065N06LG Power Field-Effect Transistor, 80A I(D), 60V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB065N15N New and Original
IPB065N15N3 New and Original
IPB065N15N3G Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263
IPB065N15N3GE8197ATMA1 (Alt: SP001227194)
IPB065N15N3GS New and Original
IPB067N08N3 G MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3
IPB067N08N3G Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263
IPB06CN10NG New and Original
IPB06CNE8NG New and Original
IPB06N03 New and Original
IPB06N03LA 06N03LA New and Original
IPB06N03LA,06N03LA,IPB06 New and Original
IPB06N03LA/TO-252/INFINE New and Original
IPB06N03LAG New and Original
IPB06N03LAP New and Original
IPB06S60C New and Original
IPB065N15N3 G RF Bipolar Transistors MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
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