IPL60R065P7AUMA1

IPL60R065P7AUMA1
Mfr. #:
IPL60R065P7AUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 4VSON
Lifecycle:
New from this manufacturer.
Datasheet:
IPL60R065P7AUMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPL60R065P7AUMA1 more Information
Product Attribute
Attribute Value
Tags
IPL60R065P, IPL60R065, IPL60R06, IPL60R0, IPL60, IPL6, IPL
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 65 mOhm 67 nC CoolMOS™ Power Mosfet - VSON-4
***ark
Mosfet, N-Ch, 600V, 41A, Vson; Transistor Polarity:n Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Part # Mfg. Description Stock Price
IPL60R065P7AUMA1
DISTI # 33792107
Infineon Technologies AGHIGH POWER_NEW3000
  • 3000:$3.7088
IPL60R065P7AUMA1
DISTI # IPL60R065P7AUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1In Stock
  • 1000:$4.3233
  • 500:$4.9638
  • 100:$5.7003
  • 10:$6.8850
  • 1:$7.6200
IPL60R065P7AUMA1
DISTI # IPL60R065P7AUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1In Stock
  • 1000:$4.3233
  • 500:$4.9638
  • 100:$5.7003
  • 10:$6.8850
  • 1:$7.6200
IPL60R065P7AUMA1
DISTI # IPL60R065P7AUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$4.0419
IPL60R065P7AUMA1
DISTI # V36:1790_18787581
Infineon Technologies AGHIGH POWER_NEW0
  • 3000000:$3.4490
  • 1500000:$3.4520
  • 300000:$3.6490
  • 30000:$3.9860
  • 3000:$4.0420
IPL60R065P7AUMA1
DISTI # V72:2272_18787581
Infineon Technologies AGHIGH POWER_NEW0
    IPL60R065P7AUMA1
    DISTI # IPL60R065P7AUMA1
    Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPL60R065P7AUMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$3.6900
    • 18000:$3.7900
    • 12000:$3.8900
    • 6000:$4.0900
    • 3000:$4.1900
    IPL60R065P7AUMA1
    DISTI # SP001657396
    Infineon Technologies AGHIGH POWER_NEW (Alt: SP001657396)
    RoHS: Compliant
    Min Qty: 3000
    Europe - 0
    • 30000:€3.1900
    • 18000:€3.4900
    • 12000:€3.6900
    • 6000:€3.8900
    • 3000:€4.0900
    IPL60R065P7AUMA1
    DISTI # 49AC8000
    Infineon Technologies AGMOSFET, N-CH, 600V, 41A, VSON,Transistor Polarity:N Channel,Continuous Drain Current Id:41A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes0
    • 1000:$4.0300
    • 500:$4.6400
    • 250:$5.0800
    • 100:$5.3200
    • 50:$5.7300
    • 25:$6.1300
    • 10:$6.4200
    • 1:$7.1100
    IPL60R065P7AUMA1
    DISTI # 726-IPL60R065P7AUMA1
    Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant
    3044
    • 1:$7.0400
    • 10:$6.3600
    • 25:$6.0700
    • 100:$5.2700
    • 250:$5.0300
    • 500:$4.5900
    • 1000:$3.9900
    • 3000:$3.8500
    IPL60R065P7AUMA1
    DISTI # 2841636
    Infineon Technologies AGMOSFET, N-CH, 600V, 41A, VSON
    RoHS: Compliant
    0
    • 250:$5.9300
    • 100:$6.0500
    • 50:$6.3700
    • 10:$6.7400
    • 5:$7.6200
    • 1:$8.1500
    IPL60R065P7AUMA1
    DISTI # 2841636
    Infineon Technologies AGMOSFET, N-CH, 600V, 41A, VSON3000
    • 100:£4.0600
    • 50:£4.3700
    • 10:£4.6800
    • 5:£5.4200
    • 1:£5.9500
    Image Part # Description
    IPL60R065P7AUMA1

    Mfr.#: IPL60R065P7AUMA1

    OMO.#: OMO-IPL60R065P7AUMA1

    MOSFET HIGH POWER_NEW
    IPL60R060CFD7AUMA1

    Mfr.#: IPL60R060CFD7AUMA1

    OMO.#: OMO-IPL60R060CFD7AUMA1

    MOSFET HIGH POWER_NEW
    IPL60R065C7AUMA1

    Mfr.#: IPL60R065C7AUMA1

    OMO.#: OMO-IPL60R065C7AUMA1

    MOSFET HIGH POWER_NEW
    IPL60R060CFD7AUMA1

    Mfr.#: IPL60R060CFD7AUMA1

    OMO.#: OMO-IPL60R060CFD7AUMA1-INFINEON-TECHNOLOGIES

    HIGH POWER_NEW
    IPL60R065P7AUMA1

    Mfr.#: IPL60R065P7AUMA1

    OMO.#: OMO-IPL60R065P7AUMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 4VSON
    IPL60R065P7    NPI

    Mfr.#: IPL60R065P7 NPI

    OMO.#: OMO-IPL60R065P7-NPI-1190

    N-CH 600V 41A 65mOhm ThinPAK8x8
    IPL60R065C7

    Mfr.#: IPL60R065C7

    OMO.#: OMO-IPL60R065C7-1190

    New and Original
    IPL60R065C7AUMA1

    Mfr.#: IPL60R065C7AUMA1

    OMO.#: OMO-IPL60R065C7AUMA1-INFINEON-TECHNOLOGIES

    MOSFET HIGH POWER_NEW
    IPL60R065P7

    Mfr.#: IPL60R065P7

    OMO.#: OMO-IPL60R065P7-1190

    Trans MOSFET N-CH 650V 41A 4-Pin VSON T/R (Alt: IPL60R065P7)
    Availability
    Stock:
    Available
    On Order:
    4000
    Enter Quantity:
    Current price of IPL60R065P7AUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $5.17
    $5.17
    10
    $4.91
    $49.15
    100
    $4.66
    $465.62
    500
    $4.40
    $2 198.75
    1000
    $4.14
    $4 138.80
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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