 | | |
| PartNumber | IPL60R065P7AUMA1 | IPL60R065C7AUMA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | VSON-4 | VSON-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 41 A | 29 A |
| Rds On Drain Source Resistance | 53 mOhms | 65 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 67 nC | 68 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 201 W | 180 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Series | CoolMOS P7 | CoolMOS C7 |
| Transistor Type | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 4 ns | 3.5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7 ns | 5 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 73 ns | 57 ns |
| Typical Turn On Delay Time | 16 ns | 12 ns |
| Part # Aliases | IPL60R065P7 SP001657396 | IPL60R065C7 SP001385034 |
| Tradename | - | CoolMOS |
| Height | - | 1.1 mm |
| Length | - | 8 mm |
| Width | - | 8 mm |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPL60R065P7AUMA1 | MOSFET HIGH POWER_NEW | |
| IPL60R065C7AUMA1 | MOSFET HIGH POWER_NEW | ||
| IPL60R065P7AUMA1 | MOSFET N-CH 4VSON | ||
| IPL60R065C7AUMA1 | MOSFET HIGH POWER_NEW | ||
| IPL60R065P7 NPI | N-CH 600V 41A 65mOhm ThinPAK8x8 | ||
| IPL60R065C7 | New and Original | ||
| IPL60R065P7 | Trans MOSFET N-CH 650V 41A 4-Pin VSON T/R (Alt: IPL60R065P7) |