SIR770DP-T1-GE3

Mfr. #:: SIR770DP-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET 2N-CH 30V 8A PPAK SO-8
Lifecycle:: New from this manufacturer.
Datasheet:: SIR770DP-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SIR770DP-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Arrays

Series: TrenchFETR

Packaging: Tape & Reel (TR)

Part-Aliases: SIR770DP-GE3

Unit-Weight: 0.017870 oz

Mounting-Style: SMD/SMT

Package-Case: PowerPAKR SO-8 Dual

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: PowerPAKR SO-8 Dual

Configuration: Dual

FET-Type: 2 N-Channel (Dual)

Power-Max: 17.8W

Transistor-Type: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

Input-Capacitance-Ciss-Vds: 900pF @ 15V

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 8A

Rds-On-Max-Id-Vgs: 21 mOhm @ 8A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

Gate-Charge-Qg-Vgs: 21nC @ 10V

Pd-Power-Dissipation: 17.8 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Vgs-Gate-Source-Voltage: +/- 20 V

Id-Continuous-Drain-Current: 8 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.2 V to 2.8 V

Rds-On-Drain-Source-Resistance: 17.5 mOhms

Transistor-Polarity: N-Channel

Qg-Gate-Charge: 14 nC

Forward-Transconductance-Min: 31 S

Tags: SIR770D, SIR770, SIR77, SIR7, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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Vacuum Packaging with PL

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Anti-Static Bag

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Packaging Boxes

SIR770DP-T1-GE3 Description

***ure Electronics: SiR770DP Series 30 V 0.021 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8

***et: Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R

***ment14 APAC: MOSFET,NN CH,SC DIO,30V,8A,PPAKS08; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):17500µohm; Power Dissipation Pd:3.6W

SIR770DP-T1-GE3 More Information

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Part #	Mfg.	Description	Stock	Price
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.5236
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R (Alt: SIR770DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€1.0309 10:€0.7389 25:€0.5999 50:€0.5299 100:€0.5219 500:€0.5139 1000:€0.5069
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR770DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SIR770DP-T1-GE3 DISTI # 781-SIR770DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5670
SIR770DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas -

Image	Part #	Description
	Mfr.#: SIR770DP-T1-GE3 OMO.#: OMO-SIR770DP-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SIR770DP OMO.#: OMO-SIR770DP-1190	New and Original
	Mfr.#: SIR770DP-T1-E3 OMO.#: OMO-SIR770DP-T1-E3-1190	New and Original
	Mfr.#: SIR770DP-T1-GE3 OMO.#: OMO-SIR770DP-T1-GE3-VISHAY	MOSFET 2N-CH 30V 8A PPAK SO-8

SIR770DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes