SIR77

SIR770DP-T1-GE3 vs SIR774DP-T1-GE3

 
PartNumberSIR770DP-T1-GE3SIR774DP-T1-GE3
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8MOSFET RECOMMENDED ALT 78-SIR788DP-T1-GE3
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYE
TechnologySiSi
Mounting StyleSMD/SMT-
Package / CasePowerPAK-SO-8-
Number of Channels2 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage30 V-
Id Continuous Drain Current8 A-
Rds On Drain Source Resistance21 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge21 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation17.8 W-
ConfigurationDual-
Channel ModeEnhancement-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReel
Height1.04 mm-
Length6.15 mm-
SeriesSIRSIR
Transistor Type2 N-Channel-
Width5.15 mm-
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min31 S-
Fall Time8 ns-
Product TypeMOSFETMOSFET
Rise Time10 ns-
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time15 ns-
Typical Turn On Delay Time14 ns-
Part # AliasesSIR770DP-GE3SIR774DP-GE3
Unit Weight0.017870 oz0.017870 oz
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR770DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIR774DP-T1-GE3 MOSFET RECOMMENDED ALT 78-SIR788DP-T1-GE3
Vishay
Vishay
SIR774DP-T1-GE3 RF Bipolar Transistors MOSFET 30 Volts 40 Amps 62.5 Watts
SIR770DP-T1-GE3 MOSFET 2N-CH 30V 8A PPAK SO-8
SIR77001F00A2 New and Original
SIR770DP New and Original
SIR770DP-T1-E3 New and Original
SIR774DP-T1-E3 New and Original
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