SI4825DDY-T1-GE3

SI4825DDY-T1-GE3
Mfr. #:
SI4825DDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 25V Vgs SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SI4825DDY-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4825DDY-T1-GE3 DatasheetSI4825DDY-T1-GE3 Datasheet (P4-P6)SI4825DDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SI4825DDY-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
14.9 A
Rds On - Drain-Source Resistance:
12.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.4 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
57 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI4
Transistor Type:
1 P-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
28 S
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
13 ns
Part # Aliases:
SI4825DDY-GE3
Unit Weight:
0.006596 oz
Tags
SI4825D, SI4825, SI482, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***y
    S***y
    IN

    Received the order within three weeks... tested too... it works quite well and is highly accurate in giving the coordinates... just one note... when I used the first time, it took about an hour to get a satellite lock anyway an impressive product and the description was very accurate, you get what you see... loved the seller, must buy.♥️

    2019-06-05
    R***v
    R***v
    FR

    As in the description, it came 15 days before spassk-far

    2019-06-21
***et Europe
Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14.9A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: No
***ment14 APAC
MOSFET,P CH,DIODE,30V,14.9A,8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-14.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-10.9A; Power Dissipation Pd:2.7W; Voltage Vgs Max:-25V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI4825DDY-T1-GE3
DISTI # V72:2272_09216587
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant
2238
  • 1000:$0.4110
  • 500:$0.5030
  • 250:$0.5695
  • 100:$0.5930
  • 25:$0.7467
  • 10:$0.8477
  • 1:$1.0227
SI4825DDY-T1-GE3
DISTI # V36:1790_09216587
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant
0
  • 2500000:$0.3681
  • 1250000:$0.3683
  • 250000:$0.3785
  • 25000:$0.3944
  • 2500:$0.3969
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
12251In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
12251In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
10000In Stock
  • 25000:$0.3591
  • 12500:$0.3629
  • 5000:$0.3771
  • 2500:$0.3969
SI4825DDY-T1-GE3
DISTI # 31264063
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant
5000
  • 2500:$0.3139
SI4825DDY-T1-GE3
DISTI # 30172383
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant
2238
  • 19:$1.0227
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 12500
  • 125000:$0.4913
  • 62500:$0.4997
  • 25000:$0.5083
  • 12500:$0.5264
  • 7500:$0.5459
  • 5000:$0.5669
  • 2500:$0.5896
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.3289
  • 15000:€0.3539
  • 10000:€0.3829
  • 5000:€0.4449
  • 2500:€0.6529
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4825DDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.3462
  • 15000:$0.3557
  • 10000:$0.3659
  • 5000:$0.3814
  • 2500:$0.3930
SI4825DDY-T1-GE3
DISTI # 15R5086
Vishay IntertechnologiesMOSFET Transistor, P Channel, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V0
  • 10000:$0.3390
  • 6000:$0.3470
  • 4000:$0.3600
  • 2000:$0.4000
  • 1000:$0.4400
  • 1:$0.4590
SI4825DDY-T1-GE3
DISTI # 23T8516
Vishay IntertechnologiesMOSFET,P CHANNEL,DIODE,30V,14.9A,8-SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes4305
  • 500:$0.5570
  • 250:$0.5970
  • 100:$0.6360
  • 50:$0.6930
  • 25:$0.7510
  • 10:$0.8080
  • 1:$0.9720
SI4825DDY-T1-GE3.
DISTI # 28AC2146
Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:2.7W,No. of Pins:8PinsRoHS Compliant: No0
  • 10000:$0.3390
  • 6000:$0.3470
  • 4000:$0.3600
  • 2000:$0.4000
  • 1000:$0.4400
  • 1:$0.4590
SI4825DDY-T1-GE3
DISTI # 70459545
Vishay Siliconix30V 14.9A 5.0W 12.5mohm @ 10V
RoHS: Compliant
0
  • 2500:$0.5720
  • 5000:$0.5450
SI4825DDY-T1-GE3
DISTI # 781-SI4825DDY-GE3
Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant
6464
  • 1:$0.9400
  • 10:$0.7770
  • 100:$0.5960
  • 500:$0.5130
  • 1000:$0.4040
  • 2500:$0.3770
  • 5000:$0.3590
  • 10000:$0.3450
SI4825DDY-T1-GE3Vishay Semiconductors14900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA1520
  • 365:$0.4400
  • 92:$0.5500
  • 1:$1.1000
SI4825DDY-T1-GE3
DISTI # 1807295
Vishay IntertechnologiesP-CH MOSFET SO-8 30V 13MOHM @ 10V- LEAD(, RL2470
  • 10000:£0.3200
  • 5000:£0.3300
  • 2500:£0.3410
SI4825DDY-T1-GE3
DISTI # TMOSP10626
Vishay IntertechnologiesP-CH 30V 14,9A 12,5mOhm SO-8
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 2500:$0.4940
  • 5000:$0.4658
  • 7500:$0.4375
  • 10000:$0.3811
SI4825DDY-T1-GE3
DISTI # 1858962
Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC4680
  • 500:£0.3600
  • 250:£0.3890
  • 100:£0.4180
  • 25:£0.5450
  • 5:£0.6770
SI4825DDY-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant
Americas - 2500
    SI4825DDY-T1-GE3
    DISTI # 1858962RL
    Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC
    RoHS: Compliant
    0
    • 2500:$0.7600
    • 500:$0.7750
    • 100:$0.9000
    • 10:$1.1700
    • 1:$1.4200
    SI4825DDY-T1-GE3
    DISTI # 1858962
    Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC
    RoHS: Compliant
    4300
    • 2500:$0.7600
    • 500:$0.7750
    • 100:$0.9000
    • 10:$1.1700
    • 1:$1.4200
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    Current price of SI4825DDY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
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    Ext. Price
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    $0.94
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    $0.78
    $7.77
    100
    $0.60
    $59.60
    500
    $0.51
    $256.50
    1000
    $0.40
    $404.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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