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SI4825DDY-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 68926
S-82484-Rev. A, 13-Oct-08
Vishay Siliconix
Si4825DDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= 25 °C
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
=250µA
I
D
=5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.02
0.04
0.06
0.08
0.10
02468 10
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=10 A
0
34
68
102
136
170
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area
0.01
100
1
100
0.01
- Drain Current (A)
I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
0.1 1 10
10
T
A
= 25 °C
Single Pulse
BVDSS
Limited byR
DS(on)
*
DC
10 s
100 ms
10 ms
1ms
1 s
Vishay Siliconix
Si4825DDY
Document Number: 68926
S-82484-Rev. A, 13-Oct-08
www.vishay.com
5
New Product
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
3.4
6.8
10.2
13.6
17.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Foot
T
C
- Case Temperature (°C)
0.0
1.2
2.4
3.6
4.8
6.0
0 25 50 75 100 125 150
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68926
S-82484-Rev. A, 13-Oct-08
Vishay Siliconix
Si4825DDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68926.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
-- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
0.02
0.05
P1-P3P4-P6P7-P9

SI4825DDY-T1-GE3

Mfr. #:
Buy SI4825DDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 25V Vgs SO-8
Lifecycle:
New from this manufacturer.
Delivery:
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