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FQH8N100C

FQH8N100C
Mfr. #:
FQH8N100C
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 1000V N-Channel
Lifecycle:
New from this manufacturer.
Datasheet:
FQH8N100C Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
1 kV
Id - Continuous Drain Current:
8 A
Rds On - Drain-Source Resistance:
1.45 Ohms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
225 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
QFET
Packaging:
Tube
Height:
20.82 mm
Length:
15.87 mm
Series:
FQH8N100C
Transistor Type:
1 N-Channel
Width:
4.82 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
80 ns
Product Type:
MOSFET
Rise Time:
95 ns
Factory Pack Quantity:
450
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
122 ns
Typical Turn-On Delay Time:
50 ns
Unit Weight:
0.225401 oz
Tags
FQH8, FQH
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***m
    A***m
    MV

    good

    2019-03-10
    S***v
    S***v
    BG

    NOTHING. The seller did not send me anything. Do not buy

    2019-07-11
***emi
N-Channel Power MOSFET, QFET®, 1000 V, 8.0 A, 1.45 Ω, TO-247
***r Electronics
Power Field-Effect Transistor, 8A I(D), 1000V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
MOSFET, N-CH, 1KV, 8A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Di
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Part # Mfg. Description Stock Price
FQH8N100C
DISTI # V99:2348_06359880		ON Semiconductor1000V, 8A, CFET367
  • 5000:$1.4330
  • 2500:$1.4820
  • 1000:$1.5430
  • 500:$1.7490
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # V36:1790_06359880		ON Semiconductor1000V, 8A, CFET28
  • 5000:$1.4330
  • 2500:$1.4820
  • 1000:$1.5430
  • 500:$1.7490
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # FQH8N100C-ND		ON SemiconductorMOSFET N-CH 1000V 8A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		416In Stock
  • 1350:$1.9663
  • 900:$2.0966
  • 450:$2.5526
  • 10:$3.3990
  • 1:$3.7900
FQH8N100C
DISTI # 31014348		ON Semiconductor1000V, 8A, CFET450
  • 450:$1.9200
FQH8N100C
DISTI # 31268064		ON Semiconductor1000V, 8A, CFET367
  • 5:$2.6370
FQH8N100C
DISTI # 31040247		ON Semiconductor1000V, 8A, CFET28
  • 100:$2.0320
  • 10:$2.3030
  • 5:$2.6370
FQH8N100C
DISTI # 30617742		ON Semiconductor1000V, 8A, CFET18
  • 10:$2.4863
  • 7:$3.6720
FQH8N100C
DISTI # FQH8N100C		ON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FQH8N100C)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.3900
  • 900:$1.3900
  • 1800:$1.2900
  • 2700:$1.2900
  • 4500:$1.2900
FQH8N100C
DISTI # 46AC0861		ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:1kV,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation RoHS Compliant: Yes197
  • 1:$3.2700
  • 10:$2.8500
  • 25:$2.5100
  • 50:$2.3600
  • 100:$2.0600
  • 250:$1.7600
  • 500:$1.6900
FQH8N100CON Semiconductor 
RoHS: Not Compliant		600
  • 1000:$1.7600
  • 500:$1.8600
  • 100:$1.9300
  • 25:$2.0200
  • 1:$2.1700
FQH8N100C
DISTI # 512-FQH8N100C		ON SemiconductorMOSFET 1000V N-Channel
RoHS: Compliant		550
  • 1:$3.1400
  • 10:$2.6700
  • 100:$2.3100
  • 250:$2.2000
  • 500:$1.9700
  • 1000:$1.6600
  • 2500:$1.5800
  • 5000:$1.5200
FQH8N100C
DISTI # XSKDRABV0030457		ON Semiconductor 
RoHS: Compliant		648
  • 450:$2.2900
  • 648:$2.1300
FQH8N100C
DISTI # C1S541901511456		ON SemiconductorMOSFETs18
  • 10:$1.9500
  • 1:$2.8800
FQH8N100C
DISTI # C1S226600596019		ON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		367
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # 2825207		ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3
RoHS: Compliant		200
  • 1:£3.1000
  • 10:£2.4700
  • 100:£2.1500
  • 250:£1.8200
  • 500:£1.4800
FQH8N100C
DISTI # 2825207		ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3
RoHS: Compliant		197
  • 1:$4.9000
  • 10:$4.2700
  • 100:$3.7000
  • 250:$3.3300
  • 500:$2.9200
  • 1000:$2.6400
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IAUT300N10S5N015ATMA1

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OMO.#: OMO-IAUT300N10S5N015ATMA1

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Mfr.#: IRFBG20PBF

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CRCW0805470RFKEA

Mfr.#: CRCW0805470RFKEA

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CRCW0805470RFKEA

Mfr.#: CRCW0805470RFKEA

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BZG04-150-M3-08

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OMO.#: OMO-BZG04-150-M3-08-VISHAY

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Availability
Stock:
900
On Order:
2883
Enter Quantity:
Current price of FQH8N100C is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.14
$3.14
10
$2.67
$26.70
100
$2.31
$231.00
250
$2.20
$550.00
500
$1.97
$985.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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