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IRLU3636PBF

IRLU3636PBF
Mfr. #:
IRLU3636PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
Lifecycle:
New from this manufacturer.
Datasheet:
IRLU3636PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU3636PBF DatasheetIRLU3636PBF Datasheet (P4-P6)IRLU3636PBF Datasheet (P7-P9)IRLU3636PBF Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
99 A
Rds On - Drain-Source Resistance:
8.3 mOhms
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
33 nC
Pd - Power Dissipation:
143 W
Configuration:
Single
Packaging:
Tube
Height:
6.22 mm
Length:
6.73 mm
Transistor Type:
1 N-Channel
Width:
2.38 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Part # Aliases:
SP001567320
Unit Weight:
0.139332 oz
Tags
IRLU36, IRLU3, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
N CHANNEL MOSFET, 60V, 99A, IPAK TranN CHANNEL MOSFET, 60V, 99A, IPAK
***ure Electronics
Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-251
***(Formerly Allied Electronics)
MOSFET, 60V, 99A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, I-PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:99A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):5.4mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:143W ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, N Ch., 60V, 77A, 8.4 MOHM, 51 NC QG, I-PAK, Pb-Free
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Package / Case:IPAK; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Turn Off Time:55ns; Turn On Time:13ns; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
Transistor, HEXFET Power MOSFET, 60V, 7.9mOhm max, 56A, lead-free, I-PAK | Infineon IRFU7546PBF
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***nell
MOSFET, N-CH, 60V, 56A, TO-251; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0066ohm; Rds(on) Test Voltage Vg; Available until stocks are exhausted
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 56 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 6.6 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 8.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 99
***ure Electronics
Single N-Channel 75 V 9 mOhm 56 nC HEXFET® Power Mosfet - TO-251AA
*** Source Electronics
Trans MOSFET N-CH Si 75V 80A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 75V 56A I-PAK
***(Formerly Allied Electronics)
MOSFET, N Ch., 75V, 80A, 9.0 MOHM, 51 NC QG, I-PAK, Pb-Free
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***icontronic
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:56A; Package / Case:IPAK; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***SIT Distribution GmbH
Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-251; Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:360A; SMD Marking:IRFU1010ZPBF; Termination Type:Through Hole; Turn Off Time:30ns; Turn On Time:13ns; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ark
MOSFET, 60V, 90A, 4.0 Ohm, 86 nC, I-PAK, TUBE
***ical
Trans MOSFET N-CH Si 60V 110A 3-Pin(3+Tab) IPAK Tube
***emi
N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
***ure Electronics
N-Channel 60 V 0.107 Ohm Through Hole Logic Level Power Mosfet - TO-251AA
***r Electronics
Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***trelec
MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 38 W
***rchild Semiconductor
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.
Part # Mfg. Description Stock Price
IRLU3636PBF
DISTI # V36:1790_13889686		Infineon Technologies AGTrans MOSFET N-CH Si 60V 99A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		278
  • 24000:$0.7522
  • 9000:$0.7826
  • 6000:$0.7906
  • 3000:$0.8289
IRLU3636PBF
DISTI # V99:2348_13889686		Infineon Technologies AGTrans MOSFET N-CH Si 60V 99A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		225
  • 24000:$0.7522
  • 9000:$0.7826
  • 6000:$0.7906
  • 3000:$0.8289
IRLU3636PBF
DISTI # IRLU3636PBF-ND		Infineon Technologies AGMOSFET N-CH 60V 50A IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.9170
IRLU3636PBF
DISTI # 29720907		Infineon Technologies AGTrans MOSFET N-CH Si 60V 99A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		278
  • 278:$1.4473
IRLU3636PBF
DISTI # 27487347		Infineon Technologies AGTrans MOSFET N-CH Si 60V 99A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		225
  • 10:$1.4523
IRLU3636PBF
DISTI # SP001567320		Infineon Technologies AGTrans MOSFET N-CH 60V 99A 3-Pin(3+Tab) IPAK (Alt: SP001567320)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.0369
  • 10:€0.9219
  • 25:€0.8299
  • 50:€0.7539
  • 100:€0.6909
  • 500:€0.6379
  • 1000:€0.5919
IRLU3636PBF
DISTI # 34AC1796		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-251AA,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power , RoHS Compliant: Yes2207
  • 1:$1.8200
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
  • 1000:$0.8960
  • 2500:$0.8340
  • 5000:$0.8030
IRLU3636PBF
DISTI # 70019897		Infineon Technologies AGIRLU3636PBF N-channel MOSFET Transistor,99 A,60 V,3-Pin IPAK
RoHS: Compliant		0
  • 675:$1.6800
IRLU3636PBF
DISTI # 942-IRLU3636PBF		Infineon Technologies AGMOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl
RoHS: Compliant		162
  • 1:$1.8200
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
  • 1000:$0.8960
  • 2500:$0.8340
  • 5000:$0.8030
  • 10000:$0.7720
IRLU3636PBF
DISTI # 8641028P		Infineon Technologies AGMOSFET N-CH 60V 99A HEXFET IPAK, TU570
  • 25:£1.1180
IRLU3636PBFInternational Rectifier 
RoHS: Compliant		Europe - 5825
    IRLU3636PBF
    DISTI # 2781157    		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-251AA
    RoHS: Compliant    		2212
    • 5:£1.4200
    • 25:£1.2400
    • 100:£1.0400
    • 250:£0.9790
    • 500:£0.9170
    IRLU3636PBF
    DISTI # 2781157    		Infineon Technologies AGMOSFET, N-CH, 60V, 50A, TO-251AA
    RoHS: Compliant    		2207
    • 5:$3.0600
    • 25:$2.6700
    • 100:$2.1700
    • 250:$1.8400
    • 500:$1.5900
    • 1000:$1.5000
    • 5000:$1.4200
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    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of IRLU3636PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.82
    $1.82
    10
    $1.55
    $15.50
    100
    $1.24
    $124.00
    500
    $1.09
    $545.00
    1000
    $0.90
    $896.00
    2500
    $0.83
    $2 085.00
    5000
    $0.80
    $4 015.00
    10000
    $0.77
    $7 720.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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