IRF7468TRPBF

Mfr. #:: IRF7468TRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFT 40V 9A 15.5mOhm 23nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7468TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF7468TRPBF Datasheet IRF7468TRPBF Datasheet (P4-P6)IRF7468TRPBF Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 9 A

Rds On - Drain-Source Resistance:: 17 mOhms

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 23 nC

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 1 N-Channel

Width:: 3.9 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: SP001570352

Unit Weight:: 0.019048 oz

Tags: IRF7468T, IRF7468, IRF746, IRF74, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IRF7468TRPBF Description

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 11.7 Milliohms;ID 9.4A;SO-8;PD 2.5W;VGS +/-1

***ure Electronics: Single N-Channel 40 V 15.5 mOhm 34 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 40V 9.4A 8-Pin SOIC Tube

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOIC-8 Polarity: N Variants: Enhancement mode Power dissipation: 2.5 W

*** Stop Electro: Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissip

***ical: Trans MOSFET N-CH 30V 8A Automotive 8-Pin SO T/R

***S: French Electronic Distributor since 1988

***et Europe: Trans MOSFET N-CH 30V 10.4A 8-Pin SO T/R

***i-Key: MOSFET N-CH 30V 10.4A 8SO

***ment14 APAC: MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.55W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.4A; Power Dissipation Pd:1.55W; Voltage Vgs Max:12V

***ical: Trans MOSFET N-CH 30V 11.2A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC

*** Electronics: In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon

***ure Electronics: Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC

***ark: N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ark: Mosfet Transistor, N Channel, 11 A, 30 V, 13.8 Mohm, 10 V, 1.8 V

***ure Electronics: Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***ark: Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20

***eco: Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC

***ure Electronics: Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi

***(Formerly Allied Electronics): MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 9 Milliohms; ID 10A; SO-8; PD 2.5W; VGS +/-12V

***ure Electronics: Single N-Channel 40 V 13 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8

***ment14 APAC: N CHANNEL MOSFET, 40V, 10A, SOIC; TRANSI; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;

*** Source Electronics: Trans MOSFET N-CH 40V 10A 8-Pin SOIC T/R / MOSFET N-CH 40V 10A 8-SOIC

***roFlash: Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***nell: MOSFET N, LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipatio

***Yang: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ

***ure Electronics: N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8

***et Europe: Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R

***-Wing Technology: ON SEMICONDUCTOR - FDS6690A - Power MOSFET, N Channel, 30 V, 11 A, 0.0125 ohm, SOIC, Surface Mount

***nell: MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ure Electronics: N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ure Electronics: N-Channel 30 V 19 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R - Tape and Reel

***nell: MOSFET, N CH, 30V, 0.01OHM, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.

***ark: N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin

***(Formerly Allied Electronics): MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE

***et: Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R

***nell: MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow

Market price

Part #	Mfg.	Description	Stock	Price
IRF7468TRPBF DISTI # 30701994	Infineon Technologies AG	Trans MOSFET N-CH 40V 9.4A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.4598
IRF7468TRPBF DISTI # IRF7468PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 40V 9.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1331In Stock	1000:$0.5418 500:$0.6863 100:$0.8849 10:$1.1200 1:$1.2600
IRF7468TRPBF DISTI # IRF7468PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 9.4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1331In Stock	1000:$0.5418 500:$0.6863 100:$0.8849 10:$1.1200 1:$1.2600
IRF7468TRPBF DISTI # IRF7468PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 40V 9.4A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.4909
IRF7468TRPBF DISTI # C1S322000485060	Infineon Technologies AG	Trans MOSFET N-CH 40V 9.4A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.4140
IRF7468TRPBF DISTI # IRF7468TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 9.4A 8-Pin SOIC T/R (Alt: IRF7468TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.3000 8000:$0.2917 12000:$0.2838 20000:$0.2763 40000:$0.2727 100000:$0.2692 200000:$0.2658
IRF7468TRPBF-EL DISTI # IRF7468TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7468TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.3669 8000:$0.3539 16000:$0.3409 24000:$0.3289 40000:$0.3239
IRF7468TRPBF DISTI # 13AC9200	Infineon Technologies AG	MOSFET, N-CH, 40V, 9.4A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9.4A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0117ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes	3799	1:$1.0500 10:$0.8930 25:$0.8240 50:$0.7550 100:$0.6860 250:$0.6460 500:$0.6060 1000:$0.4790
IRF7468TRPBF DISTI # 70017714	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 11.7 Milliohms,ID 9.4A,SO-8,PD 2.5W,VGS +/-1 RoHS: Compliant	0	4000:$1.1300 8000:$1.1070 20000:$1.0740 40000:$1.0280 100000:$0.9610
IRF7468TRPBF DISTI # 942-IRF7468TRPBF	Infineon Technologies AG	MOSFET MOSFT 40V 9A 15.5mOhm 23nC RoHS: Compliant	2837	1:$1.0500 10:$0.8930 100:$0.6860 500:$0.6060 1000:$0.4790
IRF7468TRPBF	International Rectifier	RoHS: Not Compliant	3157	1000:$0.4200 500:$0.4400 100:$0.4600 25:$0.4800 1:$0.5200
IRF7468TRPBF	International Rectifier	9.4 A, 40 V, 0.0155 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA	3933	2561:$0.2750 572:$0.3125 1:$1.0000
IRF7468TRPBF DISTI # 2725909	Infineon Technologies AG	MOSFET, N-CH, 40V, 9.4A, SOIC RoHS: Compliant	3799	1:$2.0100 10:$1.7900 100:$1.4200 500:$1.1000 1000:$0.8640
IRF7468TRPBF DISTI # 2725909	Infineon Technologies AG	MOSFET, N-CH, 40V, 9.4A, SOIC RoHS: Compliant	3889	5:£0.7860 25:£0.7050 100:£0.5410 250:£0.5100 500:£0.4780

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IRF7468TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes