FS100R12PT4

FS100R12PT4
Mfr. #:
FS100R12PT4
Manufacturer:
Infineon Technologies
Description:
IGBT Modules 3 PHASE POWER BRIDGE
Lifecycle:
New from this manufacturer.
Datasheet:
FS100R12PT4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
Y
Product:
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.15 V
Continuous Collector Current at 25 C:
135 A
Gate-Emitter Leakage Current:
100 nA
Pd - Power Dissipation:
500 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Brand:
Infineon Technologies
Mounting Style:
Chassis Mount
Maximum Gate Emitter Voltage:
20 V
Product Type:
IGBT Modules
Factory Pack Quantity:
6
Subcategory:
IGBTs
Tradename:
TRENCHSTOP
Part # Aliases:
FS100R12PT4BOSA1 SP000485594
Unit Weight:
13.580475 oz
Tags
FS100R12P, FS100R12, FS100R1, FS100R, FS100, FS10, FS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 135A 19-Pin
***ment14 APAC
IGBT, POW, QUAD W NTC, 1200V, 100A; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:20; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:500W
***ineon
EconoPACK 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
Part # Mfg. Description Stock Price
FS100R12PT4BOSA1
DISTI # FS100R12PT4BOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 600V 100A
RoHS: Not compliant
Min Qty: 6
Container: Bulk
Temporarily Out of Stock
  • 6:$142.1867
FS100R12PT4
DISTI # SP000485594
Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594)
RoHS: Compliant
Min Qty: 1
Europe - 3
  • 1:€170.5900
  • 10:€137.8900
  • 25:€125.2900
  • 50:€121.0900
  • 100:€117.0900
  • 500:€113.6900
  • 1000:€111.0900
FS100R12PT4BOSA1
DISTI # FS100R12PT4BOSA1
Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FS100R12PT4BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray
Americas - 18
  • 6:$128.9900
  • 12:$125.4900
  • 24:$122.2900
  • 36:$119.1900
  • 60:$116.1900
FS100R12PT4
DISTI # SP000485594
Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€145.4900
  • 10:€133.3900
  • 25:€127.9900
  • 50:€123.0900
  • 100:€118.5900
  • 500:€114.2900
  • 1000:€106.6900
FS100R12PT4
DISTI # 84R7213
Infineon Technologies AGIGBT Module,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:20Pins,Product Range:- RoHS Compliant: Yes0
    FS100R12PT4Infineon Technologies AGInsulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    1611
    • 1000:$113.7000
    • 500:$119.6800
    • 100:$124.6000
    • 25:$129.9400
    • 1:$139.9400
    FS100R12PT4BOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    1
    • 1000:$113.7000
    • 500:$119.6800
    • 100:$124.6000
    • 25:$129.9400
    • 1:$139.9400
    FS100R12PT4
    DISTI # 726-FS100R12PT4
    Infineon Technologies AGIGBT Modules 3 PHASE POWER BRIDGE
    RoHS: Compliant
    4
    • 1:$144.1100
    • 5:$141.2800
    • 10:$134.6900
    • 25:$131.8700
    Image Part # Description
    R25-1001502

    Mfr.#: R25-1001502

    OMO.#: OMO-R25-1001502-HARWIN

    Standoffs & Spacers M2.5 x 15mm HEX BRASS 5mm A/F
    HKL

    Mfr.#: HKL

    OMO.#: OMO-HKL-731

    Fuse Holder Panel Mount Neon Indicating 15A
    Availability
    Stock:
    Available
    On Order:
    1987
    Enter Quantity:
    Current price of FS100R12PT4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $144.11
    $144.11
    5
    $141.28
    $706.40
    10
    $134.69
    $1 346.90
    25
    $131.87
    $3 296.75
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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