FJNS3209RBU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - Pre-Biased

RoHS:

Y

Configuration:

Single

Transistor Polarity:

NPN

Typical Input Resistor:

4.7 kOhms

Mounting Style:

Through Hole

Package / Case:

TO-92-3

DC Collector/Base Gain hfe Min:

100

Collector- Emitter Voltage VCEO Max:

40 V

Continuous Collector Current:

0.1 A

Peak DC Collector Current:

100 mA

Pd - Power Dissipation:

300 mW

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Bulk

DC Current Gain hFE Max:

600

Emitter- Base Voltage VEBO:

5 V

Height:

3.7 mm

Length:

4 mm

Type:

NPN Epitaxial Silicon Transistor

Width:

2.31 mm

Brand:

ON Semiconductor / Fairchild

Product Type:

BJTs - Bipolar Transistors - Pre-Biased

Factory Pack Quantity:

1000

Subcategory:

Transistors

Unit Weight:

0.006286 oz

Tags

FJNS320, FJNS3, FJNS, FJN