CGHV60170D

CGHV60170D
Mfr. #:
CGHV60170D
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGHV60170D Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGHV60170D more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Technology:
GaN SiC
Vds - Drain-Source Breakdown Voltage:
32 V
Vgs - Gate-Source Breakdown Voltage:
100 V
Pd - Power Dissipation:
45 W
Mounting Style:
SMD/SMT
Packaging:
Tray
Configuration:
Single
Height:
4.064 mm
Length:
9.652 mm
Width:
5.842 mm
Brand:
Qorvo
Gate-Source Cutoff Voltage:
- 2.9 V
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Factory Pack Quantity:
50
Subcategory:
Transistors
Part # Aliases:
1092444
Tags
CGHV6, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 50V DIE
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGHV60170D-GP4
DISTI # CGHV60170D-GP4-ND
WolfspeedRF MOSFET HEMT 50V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
10In Stock
  • 10:$156.7360
CGHV60170D
DISTI # 941-CGHV60170D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
RoHS: Compliant
40
  • 10:$156.4900
CGHV60170D-GP4
DISTI # CGHV60170D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$156.7400
Image Part # Description
CGHV60040D

Mfr.#: CGHV60040D

OMO.#: OMO-CGHV60040D

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt
CGHV60075D5

Mfr.#: CGHV60075D5

OMO.#: OMO-CGHV60075D5

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt
CGHV60170D

Mfr.#: CGHV60170D

OMO.#: OMO-CGHV60170D

RF JFET Transistors GaN HEMT Die DC-6.0GHz, 170 Watt
CGHV60040D-GP4

Mfr.#: CGHV60040D-GP4

OMO.#: OMO-CGHV60040D-GP4-WOLFSPEED

RF MOSFET HEMT 50V DIE
CGHV60075D5-GP4

Mfr.#: CGHV60075D5-GP4

OMO.#: OMO-CGHV60075D5-GP4-WOLFSPEED

RF POWER TRANSISTOR
CGHV60170D-GP4

Mfr.#: CGHV60170D-GP4

OMO.#: OMO-CGHV60170D-GP4-WOLFSPEED

RF MOSFET HEMT 50V DIE
CGHV60040D

Mfr.#: CGHV60040D

OMO.#: OMO-CGHV60040D-318

RF JFET Transistors DC-6GHz 40W GaN 50Volt
CGHV60170D

Mfr.#: CGHV60170D

OMO.#: OMO-CGHV60170D-318

RF JFET Transistors DC-6GHz 170W GaN 50Volt
CGHV60075D5

Mfr.#: CGHV60075D5

OMO.#: OMO-CGHV60075D5-318

RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
CGHV60075D

Mfr.#: CGHV60075D

OMO.#: OMO-CGHV60075D-318

RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
Availability
Stock:
40
On Order:
2023
Enter Quantity:
Current price of CGHV60170D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
10
$144.23
$1 442.30
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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