RJP6085DPK-00#T0

Mfr. #:: RJP6085DPK-00#T0
Manufacturer:: Renesas Electronics
Description:: IGBT Transistors Power Module - Lead Free
Lifecycle:: New from this manufacturer.
Datasheet:: RJP6085DPK-00#T0 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Renesas Electronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Packaging:: Tube

Brand:: Renesas Electronics

Moisture Sensitive:: Yes

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1

Subcategory:: IGBTs

Tags: RJP608, RJP60, RJP6, RJP

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJP6085DPK-00#T0 Description

***et: Trans IGBT Chip N-CH 600V 40A 3-Pin TO-3P Tube

***egrated Device Technology: Insulated-Gate Bipolar Transistors (IGBT)

*** Electronic Components: IGBT Transistors Power Module - Lead Free

*** Services: CoC and 2-years warranty / RFQ for pricing

***p One Stop Global: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): Transistor; N-channel; TO-247AC; 40 A (Max.) @ 25 degC; 2.05; 160 W (Max.) @ 25

***ure Electronics: IRG4PC40 Series 600 V 20 A N-Channel Latest-Generation IGBT - TO-247AC

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.5 V Current release time: 124 ns Power dissipation: 160 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:40A; Collector Emitter Saturation Voltage, Vce(sat):2.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***nell: IGBT, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 40A; Current Temperature: 25°C; Fall Time Max: 124ns; Fall Time tf: 124ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 160W; Pulsed Current Icm: 160A; Rise Time: 23ns; Transistor Polarity: N Channel; Transistor Type: IGBT

***p One Stop Global: Trans IGBT Chip N-CH 600V 40A 220000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRGP20B60PDPbF Series 600 V 22 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: 600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.6 V Current release time: 6 ns Power dissipation: 220 W

***ment14 APAC: IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Device Marking:IRGP20B60PDPbF; Package / Case:TO-247AC; Power Dissipation Max:220W; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

*** Electronics: IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB

***p One Stop: Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube

***(Formerly Allied Electronics): 600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE | Infineon IRG4BC40UPBF

***ure Electronics: IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB

***ineon: Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine

***itex: Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220

***roFlash: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 600V 40A 37000mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: H Series 600 V 40 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP

***icroelectronics: 600 V, 20 A high speed trench gate field-stop IGBT

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***(Formerly Allied Electronics): IGBT Trench gate,600V 20A/100 deg,TO220

***nell: IGBT, SINGLE, 600V, 40A, TO-220FP; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 37W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi

***ark: Igbt Single Transistor, 40 A, 2 V, 165 W, 600 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N=-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247 Rail

***nell: IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O

***rchild Semiconductor: The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

***ical: Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247AB Rail

***ure Electronics: FGH20N60SFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247

*** Source Electronics: High current capability, High input impedance | IGBT 600V 40A 165W TO247

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,40A,TO247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:165W

RJP6085DPK-00#T0

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes