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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Part # | Mfg. | Description | Stock | Price |
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IPB020N04NGATMA1 DISTI # V72:2272_06383286 | Infineon Technologies AG | Trans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant | 1990 |
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IPB020N04NGATMA1 DISTI # V36:1790_06383286 | Infineon Technologies AG | Trans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
IPB020N04NGATMA1 DISTI # IPB020N04NGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 40V 140A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1055In Stock |
|
IPB020N04NGATMA1 DISTI # IPB020N04NGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 40V 140A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1055In Stock |
|
IPB020N04NGATMA1 DISTI # IPB020N04NGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 40V 140A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 1000In Stock |
|
IPB020N04NGATMA1 DISTI # 29552848 | Infineon Technologies AG | Trans MOSFET N-CH 40V 140A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant | 1990 |
|
IPB020N04NGATMA1 DISTI # IPB020N04NGATMA1 | Infineon Technologies AG | MV POWER MOS - Bulk (Alt: IPB020N04NGATMA1) Min Qty: 343 Container: Bulk | Americas - 0 |
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IPB020N04NGATMA1 DISTI # IPB020N04NGATMA1 | Infineon Technologies AG | MV POWER MOS - Tape and Reel (Alt: IPB020N04NGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
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IPB020N04NGATMA1 DISTI # SP000359157 | Infineon Technologies AG | MV POWER MOS (Alt: SP000359157) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
|
IPB020N04N G DISTI # 726-IPB020N04NG | Infineon Technologies AG | MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 RoHS: Compliant | 757 |
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IPB020N04NGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 140A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant | 35852 |
|
IPB020N04NGATMA1 DISTI # 8977377P | Infineon Technologies AG | MOSFET N-CHANNEL 40V 140A OPTIMOS TO263, RL | 275 |
|
IPB020N04N | Infineon Technologies AG | 388 |
Image | Part # | Description |
---|---|---|
Mfr.#: IPB020N10N5ATMA1 OMO.#: OMO-IPB020N10N5ATMA1 |
MOSFET N-Ch 100V 120A D2PAK-2 | |
Mfr.#: IPB025N08N3 G OMO.#: OMO-IPB025N08N3-G |
MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | |
Mfr.#: IPB027N10N5ATMA1 OMO.#: OMO-IPB027N10N5ATMA1 |
MOSFET N-Ch 100V 120A D2PAK-2 | |
Mfr.#: IPB025N08N3GATMA1 OMO.#: OMO-IPB025N08N3GATMA1 |
MOSFET MV POWER MOS | |
Mfr.#: IPB029N06N3GATMA1 |
MOSFET N-CH 60V 120A TO263-3 | |
Mfr.#: IPB020N04NG OMO.#: OMO-IPB020N04NG-1190 |
New and Original | |
Mfr.#: IPB020N10N5LF OMO.#: OMO-IPB020N10N5LF-1190 |
SP001503854 , DIFFERENTIATED MOSFETS (Alt: IPB020N10N5LF) | |
Mfr.#: IPB023N04NG OMO.#: OMO-IPB023N04NG-1190 |
Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: IPB027N10N3GS OMO.#: OMO-IPB027N10N3GS-1190 |
New and Original | |
Mfr.#: IPB025N10N3GE818XT OMO.#: OMO-IPB025N10N3GE818XT-317 |
RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6 |