IPB025N08N3 G

Mfr. #:: IPB025N08N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB025N08N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB025N08N3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 80 V

Id - Continuous Drain Current:: 120 A

Rds On - Drain-Source Resistance:: 2.5 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 33 ns

Product Type:: MOSFET

Rise Time:: 73 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 86 ns

Typical Turn-On Delay Time:: 28 ns

Part # Aliases:: IPB025N08N3GATMA1 IPB25N8N3GXT SP000311980

Unit Weight:: 0.139332 oz

Tags: IPB025N08N3G, IPB025N0, IPB025, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB025N08N3 G More Information

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB025N08N3GATMA1 DISTI # V72:2272_06377516	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	491	250:$3.3140 100:$3.6820 25:$4.3940 10:$4.6929 1:$5.4740
IPB025N08N3GATMA1 DISTI # V36:1790_06377516	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7603In Stock	500:$3.5581 100:$4.3940 10:$5.3590 1:$6.0000
IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7603In Stock	500:$3.5581 100:$4.3940 10:$5.3590 1:$6.0000
IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	5000In Stock	2000:$2.7677 1000:$2.9134
IPB025N08N3 G DISTI # 32731516	Infineon Technologies AG	0	1000	200:$4.2840 100:$4.6792 50:$5.7120 10:$5.7758 4:$6.4260
IPB025N08N3GATMA1 DISTI # 31005994	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$2.3063
IPB025N08N3GATMA1 DISTI # 32864934	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$2.1709 500:$2.2288 250:$2.2899 100:$2.3544 50:$2.4226 25:$2.4949 5:$2.5717
IPB025N08N3GATMA1 DISTI # 30331029	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	491	250:$3.5625 100:$3.9581 25:$4.7236 10:$5.0449 3:$5.8845
IPB025N08N3GATMA1 DISTI # SP000311980	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 2000	1000:€2.4900 2000:€2.3900 4000:€2.2900 6000:€2.1900 10000:€1.9900
IPB025N08N3 G DISTI # IPB025N08N3 G	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) RoHS: Compliant Min Qty: 148 Container: Bulk	Americas - 0	149:$2.3900 151:$2.2900 300:$2.1900 745:$2.0900 1490:$2.0900
IPB025N08N3GXT DISTI # IPB025N08N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.6900 2000:$2.5900 4000:$2.4900 6000:$2.3900 10000:$2.3900
IPB025N08N3GATMA1 DISTI # 60R2648	Infineon Technologies AG	MOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	500:$3.1400 250:$3.5000 100:$3.6900 50:$3.8800 25:$4.0600 10:$4.2500 1:$5.0000
IPB025N08N3 G DISTI # 726-IPB025N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	1428	1:$5.0000 10:$4.2500 100:$3.6900 250:$3.5000 500:$3.1400 1000:$2.6400 2000:$2.5100
IPB025N08N3 G	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant	2700	1000:$2.2400 500:$2.3600 100:$2.4500 25:$2.5600 1:$2.7500
IPB025N08N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	20	1000:$2.2400 500:$2.3600 100:$2.4500 25:$2.5600 1:$2.7500
IPB025N08N3GATMA1 DISTI # 8986898P	Infineon Technologies AG	MOSFET N-CHANNEL 80V 120A TO263-3, RL	258	10:£1.9800
IPB025N08N3GATMA1 DISTI # 1775525	Infineon Technologies AG	MOSFET, N CH, 120A, 80V, PG-TO263-3 RoHS: Compliant	1424	500:£2.4400 250:£2.7200 100:£2.8700 10:£3.3000 1:£4.3400
IPB025N08N3GATMA1 DISTI # 1775525	Infineon Technologies AG	MOSFET, N CH, 120A, 80V, PG-TO263-3 RoHS: Compliant	324	2000:$3.7800 1000:$3.9800 500:$4.7300 250:$5.2700 100:$5.5600 10:$6.4000 1:$7.5400
IPB025N08N3GATMA1 DISTI # XSKDRABS0032304	Infineon Technologies AG	RoHS: Compliant	3000 in Stock0 on Order	3000:$3.4440 1000:$3.6960

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Availability

Stock:: 600
On Order:: 2583
Enter Quantity:

Current price of IPB025N08N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$5.00~~; ~~$5.00~~

10: ~~$4.25~~; ~~$42.50~~

100: ~~$3.69~~; ~~$369.00~~

250: ~~$3.50~~; ~~$875.00~~

500: ~~$3.14~~; ~~$1 570.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB025N08N3 G

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Vacuum Packaging with PL

Step2:
Anti-Static Bag

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