 |  | | |
| PartNumber | IPB020N04N G | IPB020N04N | IPB020N04N3G |
| Description | MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 | ||
| Manufacturer | Infineon | INF | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 140 A | - | - |
| Rds On Drain Source Resistance | 2 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 7.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6.4 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 27 ns | - | - |
| Part # Aliases | IPB020N04NGATMA1 IPB2N4NGXT SP000359157 | - | - |
| Unit Weight | 0.056438 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB020N04N G | MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 | |
| IPB020N04NGATMA1 | MOSFET N-CH 40V 140A TO263-7 | ||
Infineon Technologies |
IPB020N04NGATMA1 | MOSFET MV POWER MOS | |
| IPB020N04N | New and Original | ||
| IPB020N04N3G | New and Original | ||
| IPB020N04NG | New and Original | ||
| IPB020N04N G | Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 |