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IRG7PH35UDPBF

IRG7PH35UDPBF
Mfr. #:
IRG7PH35UDPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
Lifecycle:
New from this manufacturer.
Datasheet:
IRG7PH35UDPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG7PH35UDPBF DatasheetIRG7PH35UDPBF Datasheet (P4-P6)IRG7PH35UDPBF Datasheet (P7-P9)IRG7PH35UDPBF Datasheet (P10-P11)
ECAD Model:
More Information:
IRG7PH35UDPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 kV
Collector-Emitter Saturation Voltage:
1.9 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
50 A
Pd - Power Dissipation:
180 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tube
Continuous Collector Current Ic Max:
50 A
Brand:
Infineon Technologies
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
400
Subcategory:
IGBTs
Part # Aliases:
SP001537540
Unit Weight:
1.340411 oz
Tags
IRG7PH35UD, IRG7PH35, IRG7PH3, IRG7PH, IRG7P, IRG7, IRG
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Part # Mfg. Description Stock Price
IRG7PH35UDPBF
DISTI # 30155874		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		238
  • 100:$5.4240
  • 25:$6.2400
  • 10:$6.5472
  • 3:$7.2384
IRG7PH35UDPBF
DISTI # IRG7PH35UDPBF-ND		Infineon Technologies AGIGBT 1200V 50A 180W TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		340In Stock
  • 1000:$4.4931
  • 500:$5.1587
  • 100:$5.9242
  • 25:$6.8228
  • 1:$7.9200
IRG7PH35UDPBF
DISTI # C1S322000499276		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant		238
  • 200:$4.8900
  • 100:$5.9100
  • 50:$6.3900
  • 25:$6.9600
  • 10:$7.1200
  • 1:$10.4000
IRG7PH35UDPBF
DISTI # IRG7PH35UDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC (Alt: IRG7PH35UDPBF)
RoHS: Compliant
Min Qty: 400		Asia - 400
  • 400:$4.6428
  • 800:$4.4520
  • 1200:$4.3919
  • 2000:$4.2207
  • 4000:$4.1666
  • 10000:$4.0625
  • 20000:$3.9634
IRG7PH35UDPBF
DISTI # IRG7PH35UDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG7PH35UDPBF)
RoHS: Compliant
Min Qty: 100
Container: Tube		Americas - 0
  • 100:$4.4900
  • 150:$4.3900
  • 250:$4.1900
  • 500:$4.0900
  • 1000:$3.9900
IRG7PH35UDPBF
DISTI # 942-IRG7PH35UDPBF		Infineon Technologies AGIGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
RoHS: Compliant		127
  • 1:$7.5400
  • 10:$6.8200
  • 25:$6.5000
  • 100:$5.6500
IRG7PH35UDPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
RoHS: Compliant		25
  • 1000:$3.7900
  • 500:$3.9900
  • 100:$4.1500
  • 25:$4.3300
  • 1:$4.6600
IRG7PH35UDPBFInternational RectifierInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
RoHS: Compliant		19
  • 1000:$3.7900
  • 500:$3.9900
  • 100:$4.1500
  • 25:$4.3300
  • 1:$4.6600
IRG7PH35UDPBFInternational Rectifier 
RoHS: Compliant		Europe - 995
    IRG7PH35UDPBF
    DISTI # 1857366    		Infineon Technologies AGIGBT,N CH,DIODE,1200V,50A,TO-247AC
    RoHS: Compliant    		0
    • 1:$11.9300
    • 10:$10.8000
    • 25:$10.3000
    • 100:$8.9400
    Image Part # Description
    2SA1213-Y-TP

    Mfr.#: 2SA1213-Y-TP

    OMO.#: OMO-2SA1213-Y-TP

    		 Bipolar Transistors - BJT PNP Silicon Plastic-Encapsulate
    2SA1213-Y-TP

    Mfr.#: 2SA1213-Y-TP

    OMO.#: OMO-2SA1213-Y-TP-MICRO-COMMERCIAL-COMPONENTS

    		 Bipolar Transistors - BJT PNP Silicon Plastic-Encapsulate
    Availability
    Stock:
    127
    On Order:
    2110
    Enter Quantity:
    Current price of IRG7PH35UDPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $7.54
    $7.54
    10
    $6.81
    $68.10
    25
    $6.49
    $162.25
    100
    $5.64
    $564.00
    250
    $5.38
    $1 345.00
    500
    $4.91
    $2 455.00
    1000
    $4.28
    $4 280.00
    2500
    $4.12
    $10 300.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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