IXTP12N50P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

12 A

Rds On - Drain-Source Resistance:

500 mOhms

Vgs th - Gate-Source Threshold Voltage:

5.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

29 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

200 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

Polar

Packaging:

Tube

Height:

16 mm

Length:

10.66 mm

Series:

IXTP12N50P

Transistor Type:

1 N-Channel

Type:

Polar Power MOSFET

Width:

4.83 mm

Brand:

IXYS

Forward Transconductance - Min:

7.5 S

Fall Time:

20 ns

Product Type:

MOSFET

Rise Time:

27 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

65 ns

Typical Turn-On Delay Time:

22 ns

Unit Weight:

0.081130 oz

Tags

IXTP12N5, IXTP12N, IXTP12, IXTP1, IXTP, IXT