| PartNumber | IXTP12N65X2M | IXTP12N50P | IXTP12N65X2 |
| Description | Discrete Semiconductor Modules DiscMSFT NChUltraJnctX2Class TO-220AB/FP | MOSFET 12 Amps 500V 0.5 Ohm Rds | MOSFET DISCMSFT NCHULTRAJNCTX2CLASS |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Product | Power MOSFET Modules | - | - |
| Type | X2-Class | Polar Power MOSFET | - |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | - |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 16 ns | 20 ns | 16 ns |
| Id Continuous Drain Current | 12 A | 12 A | 12 A |
| Pd Power Dissipation | 40 W | 200 W | 180 W |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 300 mOhms | 500 mOhms | 300 mOhms |
| Rise Time | 24 ns | 27 ns | 24 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Tradename | HiPerFET | Polar | HiPerFET |
| Typical Turn Off Delay Time | 52 ns | 65 ns | 52 ns |
| Typical Turn On Delay Time | 23 ns | 22 ns | 23 ns |
| Vds Drain Source Breakdown Voltage | 650 V | 500 V | 600 V |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 5.5 V | 2.5 V |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Qg Gate Charge | - | 29 nC | 17.7 nC |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 16 mm | - |
| Length | - | 10.66 mm | - |
| Series | - | IXTP12N50P | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 4.83 mm | - |
| Forward Transconductance Min | - | 7.5 S | - |
| Unit Weight | - | 0.081130 oz | - |