SI2323DS-T1-GE3

Mfr. #:: SI2323DS-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET P-CH 20V 3.7A SOT23-3
Lifecycle:: New from this manufacturer.
Datasheet:: SI2323DS-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SI2323DS-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: IC Chips

Series: TrenchFETR

Packaging: Digi-ReelR Alternate Packaging

Part-Aliases: SI2323DS-GE3

Unit-Weight: 0.050717 oz

Mounting-Style: SMD/SMT

Package-Case: TO-236-3, SC-59, SOT-23-3

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: SOT-23-3 (TO-236)

Configuration: Single

FET-Type: MOSFET P-Channel, Metal Oxide

Power-Max: 750mW

Transistor-Type: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Input-Capacitance-Ciss-Vds: 1020pF @ 10V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 3.7A (Ta)

Rds-On-Max-Id-Vgs: 39 mOhm @ 4.7A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Charge-Qg-Vgs: 19nC @ 4.5V

Pd-Power-Dissipation: 750 mW

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 43 ns

Rise-Time: 43 ns

Vgs-Gate-Source-Voltage: 8 V

Id-Continuous-Drain-Current: 3.7 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Rds-On-Drain-Source-Resistance: 39 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 71 ns

Typical-Turn-On-Delay-Time: 25 ns

Channel-Mode: Enhancement

Tags: SI2323DS-T1, SI2323DS-T, SI2323DS, SI2323D, SI2323, SI232, SI23, SI2

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2323DS-T1-GE3 More Information

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Part #	Mfg.	Description	Stock	Price
SI2323DS-T1-GE3 DISTI # V72:2272_07434936	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	54	25:$0.4688 10:$0.5729 1:$0.6442
SI2323DS-T1-GE3 DISTI # V36:1790_07434936	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000:$0.4227
SI2323DS-T1-GE3 DISTI # SI2323DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 3.7A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	18754In Stock	1000:$0.2539 500:$0.3173 100:$0.4014 10:$0.5240 1:$0.5900
SI2323DS-T1-GE3 DISTI # SI2323DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.7A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	18754In Stock	1000:$0.2539 500:$0.3173 100:$0.4014 10:$0.5240 1:$0.5900
SI2323DS-T1-GE3 DISTI # SI2323DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 3.7A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	18000In Stock	30000:$0.1972 15000:$0.2079 6000:$0.2233 3000:$0.2387
SI2323DS-T1-GE3 DISTI # 32371349	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	3000	3000:$0.3156
SI2323DS-T1-GE3 DISTI # 32878336	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	2850	137:$0.5615
SI2323DS-T1-GE3 DISTI # 30331539	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R RoHS: Compliant	54	21:$0.6442
SI2323DS-T1-GE3 DISTI # SI2323DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2323DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2719 18000:$0.2789 12000:$0.2869 6000:$0.2989 3000:$0.3079
SI2323DS-T1-GE3 DISTI # SI2323DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R (Alt: SI2323DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2419 18000:€0.2599 12000:€0.2819 6000:€0.3279 3000:€0.4799
SI2323DS-T1-GE3 DISTI # SI2323DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R (Alt: SI2323DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2323DS-T1-GE3 DISTI # 16P3711	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 16P3711) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.4560 500:$0.5310 250:$0.5880 100:$0.6430 50:$0.7450 25:$0.8460 1:$1.0600
SI2323DS-T1-GE3 DISTI # 71T8046	Vishay Intertechnologies	Trans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Tape and Reel (Alt: 71T8046) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	12000:$0.4450 6000:$0.4640 1:$0.4880
SI2323DS-T1-GE3 DISTI # 16P3711	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 4.7A TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes	0	1:$0.3650 25:$0.3650 50:$0.3650 100:$0.3650
SI2323DS-T1-GE3 DISTI # 71T8046	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 4.7A TO-236, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes	3000	1:$0.6490 3000:$0.6490
SI2323DS-T1-GE3 DISTI # 70459506	Vishay Siliconix	20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant	0	3000:$0.6620 6000:$0.6260
SI2323DS-T1-GE3	Vishay Intertechnologies	Single P-Channel 20 V 0.039 O 19 nC Surface Mount Power Mosfet - SOT-23 RoHS: Compliant	6000Reel	3000:$0.2250
SI2323DS-T1-GE3 DISTI # 781-SI2323DS-T1-GE3	Vishay Intertechnologies	MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant	19116	1:$0.8400 10:$0.6760 100:$0.5130 500:$0.4240 1000:$0.3390 3000:$0.3070 6000:$0.2860 9000:$0.2750 24000:$0.2660
SI2323DS-T1-GE3	Vishay Siliconix	3700MA, 20V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB	5	1:$0.4800
SI2323DST1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB RoHS: Compliant	855
SI2323DS-T1-GE3 DISTI # 2371204	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 4.7A TO-236, FULL REEL RoHS: Compliant	3000	3000:$0.5700
SI2323DS-T1-GE3 DISTI # XSFP00000063440	Vishay Siliconix	RoHS: Compliant	6000 in Stock0 on Order	6000:$0.3000 3000:$0.3214
SI2323DS-T1-GE3	Vishay Intertechnologies	MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V RoHS: Compliant	Americas - 6000
SI2323DS-T1-GE3 DISTI # 2371204	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 4.7A TO-236, FUL	3000	3000:£0.5880

Image	Part #	Description
	Mfr.#: SI2323DS-T1-E3 OMO.#: OMO-SI2323DS-T1-E3	MOSFET 20V 3.7A 0.039Ohm
	Mfr.#: SI2323DS-T1-GE3 OMO.#: OMO-SI2323DS-T1-GE3	MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
	Mfr.#: SI2323DDS-T1-E3 OMO.#: OMO-SI2323DDS-T1-E3-1190	New and Original
	Mfr.#: SI2323DDS-T1-GE3 OMO.#: OMO-SI2323DDS-T1-GE3-VISHAY	MOSFET P-CH 20V 5.3A SOT-23
	Mfr.#: SI2323DS-T1 OMO.#: OMO-SI2323DS-T1-VISHAY	MOSFET P-CH 20V 3.7A SOT23
	Mfr.#: SI2323DS-T1-E3 OMO.#: OMO-SI2323DS-T1-E3-VISHAY	MOSFET P-CH 20V 3.7A SOT23-3
	Mfr.#: SI2323DS-T1-GE3 OMO.#: OMO-SI2323DS-T1-GE3-VISHAY	MOSFET P-CH 20V 3.7A SOT23-3
	Mfr.#: SI2323DS-TI-E3 OMO.#: OMO-SI2323DS-TI-E3-1190	New and Original
	Mfr.#: SI2323DDS-T1-GE3-CUT TAPE OMO.#: OMO-SI2323DDS-T1-GE3-CUT-TAPE-1190	New and Original
	Mfr.#: SI2323DS-T1-E3-CUT TAPE OMO.#: OMO-SI2323DS-T1-E3-CUT-TAPE-1190	New and Original

SI2323DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes