PartNumber | SI2323CDS-T1-GE3 | SI2321DS-T1-GE3 | SI2321DS-T1-E3 |
Description | MOSFET -20V Vds 8V Vgs SOT-23 | MOSFET RECOMMENDED ALT 78-SI2323DDS-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI2323DDS-T1-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 6 A | - | - |
Rds On Drain Source Resistance | 39 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Qg Gate Charge | 16 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 1.45 mm | 1.45 mm | - |
Length | 2.9 mm | 2.9 mm | - |
Series | SI2 | SI2 | SI2 |
Transistor Type | 1 P-Channel | - | - |
Width | 1.6 mm | 1.6 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 20 S | - | - |
Fall Time | 12 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 23 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 40 ns | - | - |
Typical Turn On Delay Time | 15 ns | - | - |
Part # Aliases | SI2323CDS-GE3 | SI2321DS-GE3 | SI2321DS-E3 |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |