SI8497DB-T2-E1

SI8497DB-T2-E1
Mfr. #:
SI8497DB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1
Lifecycle:
New from this manufacturer.
Datasheet:
SI8497DB-T2-E1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI8497DB-T2-E1 DatasheetSI8497DB-T2-E1 Datasheet (P4-P6)SI8497DB-T2-E1 Datasheet (P7-P8)
ECAD Model:
More Information:
SI8497DB-T2-E1 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
MicroFoot-6
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
43 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.1 V
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
49 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
13 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Height:
0.6 mm
Length:
2.36 mm
Series:
SI8
Transistor Type:
1 P-Channel
Width:
1.56 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
10 S
Fall Time:
25 ns
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
60 ns
Typical Turn-On Delay Time:
17 ns
Tags
SI849, SI84, SI8
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
*** Europe
P-CH SINGLE -30V MICROFOOT
***
30V P-CHANNEL (D-S)
Si84x7DB 30V P-Channel TrenchFET Gen III MOSFETs
Vishay Siliconix's Si84x7DB 30V P-Channel TrenchFET Gen III MOSFETs set new benchmarks for size and on-resistance. The new Si8497DB is the industry's first 30V chipscale MOSFET in the compact 1 mm by 1.5 mm size, making it the smallest such device on the market, while the Si8487DB provides the lowest on-resistance available for a 30V chipscale device in the 1.6 mm by 1.6 mm form factor. Vishay's TrenchFET Gen III P-channel technology uses advanced process techniques to pack one billion transistor cells into each square inch of silicon. The Si8497DB and Si8487DB will be used for load, battery, and charger switching in handheld devices including smart phones, tablets, point-of-sale (POS) devices, and mobile computing.View entire Vishay Siliconix Power MOSFETs
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Part # Mfg. Description Stock Price
SI8497DB-T2-E1
DISTI # V72:2272_09216577
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
RoHS: Compliant
995
  • 500:$0.2806
  • 250:$0.3074
  • 100:$0.3415
  • 25:$0.4120
  • 10:$0.5034
  • 1:$0.6598
SI8497DB-T2-E1
DISTI # V36:1790_09216577
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
RoHS: Compliant
0
  • 3000000:$0.1745
  • 1500000:$0.1747
  • 300000:$0.1866
  • 30000:$0.2053
  • 3000:$0.2083
SI8497DB-T2-E1
DISTI # SI8497DB-T2-E1CT-ND
Vishay SiliconixMOSFET P-CH 30V 13A MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4998In Stock
  • 1000:$0.2353
  • 500:$0.3046
  • 100:$0.3876
  • 10:$0.5190
  • 1:$0.6100
SI8497DB-T2-E1
DISTI # SI8497DB-T2-E1DKR-ND
Vishay SiliconixMOSFET P-CH 30V 13A MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4998In Stock
  • 1000:$0.2353
  • 500:$0.3046
  • 100:$0.3876
  • 10:$0.5190
  • 1:$0.6100
SI8497DB-T2-E1
DISTI # SI8497DB-T2-E1TR-ND
Vishay SiliconixMOSFET P-CH 30V 13A MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.1720
  • 15000:$0.1814
  • 6000:$0.1949
  • 3000:$0.2083
SI8497DB-T2-E1
DISTI # 25790150
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
RoHS: Compliant
995
  • 500:$0.2806
  • 250:$0.3074
  • 100:$0.3415
  • 39:$0.4120
SI8497DB-T2-E1
DISTI # SI8497DB-T2-E1
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8497DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1639
  • 18000:$0.1679
  • 12000:$0.1729
  • 6000:$0.1799
  • 3000:$0.1859
SI8497DB-T2-E1
DISTI # 94T2855
Vishay IntertechnologiesMOSFET, P CH, -30V, -13A, MICRO FOOT-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-13A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 50000:$0.1660
  • 30000:$0.1730
  • 20000:$0.1860
  • 10000:$0.1990
  • 5000:$0.2150
  • 1:$0.2210
SI8497DB-T2-E1
DISTI # 94T2854
Vishay IntertechnologiesMOSFET, P CHANNEL, -30V, -13A, MICRO FOOT-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-13A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-500mVRoHS Compliant: Yes0
  • 2500:$0.2210
  • 1000:$0.2780
  • 500:$0.3170
  • 250:$0.3690
  • 100:$0.4150
  • 50:$0.4690
  • 25:$0.5150
  • 1:$0.5740
SI8497DB-T2-E1
DISTI # 78-SI8497DB-T2-E1
Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1
RoHS: Compliant
0
  • 1:$0.6000
  • 10:$0.4620
  • 100:$0.3430
  • 500:$0.2810
  • 1000:$0.2170
  • 3000:$0.1980
  • 6000:$0.1850
  • 9000:$0.1720
  • 24000:$0.1630
SI8497DB-T2-E1Vishay Intertechnologies 3000
    SI8497DBT2E1Vishay Intertechnologies 
    RoHS: Compliant
    3000
      SI8497DB-T2-E1Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1
      RoHS: Compliant
      Americas -
        Image Part # Description
        SI8497DB-T2-E1

        Mfr.#: SI8497DB-T2-E1

        OMO.#: OMO-SI8497DB-T2-E1

        MOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1
        SI8497DB-T2-E1

        Mfr.#: SI8497DB-T2-E1

        OMO.#: OMO-SI8497DB-T2-E1-VISHAY

        Trans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
        Availability
        Stock:
        Available
        On Order:
        3000
        Enter Quantity:
        Current price of SI8497DB-T2-E1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.60
        $0.60
        10
        $0.46
        $4.62
        100
        $0.34
        $34.30
        500
        $0.28
        $140.50
        1000
        $0.22
        $217.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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