FDMC86340ET80

Mfr. #:: FDMC86340ET80
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET FET 80V 6.5 MOHM PQFN33
Lifecycle:: New from this manufacturer.
Datasheet:: FDMC86340ET80 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: FDMC86340ET80 more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: Power-33-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 80 V

Id - Continuous Drain Current:: 48 A

Rds On - Drain-Source Resistance:: 8.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 31 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 54 W

Configuration:: Single

Tradename:: PowerTrench Power Clip

Packaging:: Reel

Height:: 0.8 mm

Length:: 3.3 mm

Series:: FDMC86340ET80

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: ON Semiconductor / Fairchild

Forward Transconductance - Min:: 36 S

Fall Time:: 5.1 ns

Product Type:: MOSFET

Rise Time:: 7.9 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 23 ns

Typical Turn-On Delay Time:: 20 ns

Unit Weight:: 0.005386 oz

Tags: FDMC863, FDMC86, FDMC8, FDMC, FDM

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMC86340ET80 Description

***ark: PT7 N-ch 80/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM

***emi: N-Channel Shielded Gate Power Trench® MOSFET 80V, 68A, 6.5mΩ

***Yang: Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 68A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

***ical: Trans MOSFET N-CH 80V 82A Automotive 8-Pin TDSON EP T/R

***ark: MOSFET, N-CH, 80V, 82A, TDSON; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:82A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Qualification:- RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 82A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 82A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 74W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ineon SCT: Trans MOSFET N-CH 80V 74A Automotive 8-Pin TDSON EP T/R, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 80V, 74A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 74A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0062ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ure Electronics: N-Channel 80 V 6.2 mOhm 69.4 W SMT TrenchFET Mosfet - PowerPAK SO-8

***ical: Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) PowerPAK SO EP T/R

***nell: MOSFET, N-CH, 80V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69.4W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:5; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***ical: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 80V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

***ure Electronics: N-Channel 80 V 8.9 mOhm 83 W SMT TrenchFET Power Mosfet - PowerPAK SO-8

***ical: Trans MOSFET N-CH 80V 60A 8-Pin PowerPAK SO EP T/R

***et: N-CHANNEL 80-V (D-S) POWERPAK SO-8 THUNDERFET MOSFET, 6.3 MO

***ark: MOSFET, N-CH, 80V, 60A, POWERPAKSO-8

***nell: MOSFET, N-CH, 80V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***et Europe: Trans MOSFET N-CH 80V 23.8A 8-Pin PowerPAK SO T/R

***mal: N-Channel 80V PowerPak SO-8 ThunderFET MOSFET 5.5m

***el Electronic: B RAM 512 x 12 Bit EPROM 8-Bit CMOS Microcontroller - SOIC-8

***enic: 80V 60A 6.25W 5.5m´Î@10V20A 2.8V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS

***ure Electronics: N Chan, 80V, 60a, 5.5 mOhms @ 10V, PowerPAK® SO-8

***nell: MOSFET, N-CH, 80V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited

***S: French Electronic Distributor since 1988

FDMC86340ET80 More Information

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

Part #	Mfg.	Description	Stock	Price
FDMC86340ET80 DISTI # V72:2272_06337926	ON Semiconductor	PT7 N-CH 80/20V POWER TRENCH M	2044	1000:$1.1908 500:$1.2034 250:$1.3867 100:$1.4011 25:$1.7629 10:$1.7807 1:$2.3234
FDMC86340ET80 DISTI # V36:1790_06337926	ON Semiconductor	PT7 N-CH 80/20V POWER TRENCH M	0	3000000:$0.8808 1500000:$0.8820 300000:$0.9384 30000:$1.0180 3000:$1.0300
FDMC86340ET80 DISTI # FDMC86340ET80CT-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDMC86340ET80 DISTI # FDMC86340ET80DKR-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDMC86340ET80 DISTI # FDMC86340ET80TR-ND	ON Semiconductor	MOSFET N-CH 80V 48A POWER33 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.0301
FDMC86340ET80 DISTI # 31339539	ON Semiconductor	PT7 N-CH 80/20V POWER TRENCH M	1944	7:$2.3234
FDMC86340ET80 DISTI # FDMC86340ET80	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R (Alt: FDMC86340ET80) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.9569 18000:€1.0029 12000:€1.1039 6000:€1.2919 3000:€1.5789
FDMC86340ET80 DISTI # FDMC86340ET80	ON Semiconductor	Trans MOSFET N-CH 80V 14A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMC86340ET80) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.8969 18000:$0.9189 12000:$0.9309 6000:$0.9429 3000:$0.9489
FDMC86340ET80 DISTI # 512-FDMC86340ET80	ON Semiconductor	MOSFET FET 80V 6.5 MOHM PQFN33 RoHS: Compliant	1040	1:$2.1300 10:$1.8100 100:$1.4500 500:$1.2700 1000:$1.0500 3000:$0.9820 6000:$0.9450

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FDMC86340ET80

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes