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SIDR402DP-T1-GE3

SIDR402DP-T1-GE3
Mfr. #:
SIDR402DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
Lifecycle:
New from this manufacturer.
Datasheet:
SIDR402DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR402DP-T1-GE3 DatasheetSIDR402DP-T1-GE3 Datasheet (P4-P6)SIDR402DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:
SIDR402DP-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8DC-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
1.16 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.3 V
Vgs - Gate-Source Voltage:
20 V, - 16 V
Qg - Gate Charge:
53 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SID
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
147 S
Fall Time:
40 ns
Product Type:
MOSFET
Rise Time:
100 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
56 ns
Typical Turn-On Delay Time:
45 ns
Tags
SIDR, SID
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 64.6 A 6.25 W Surface Mount Mosfet - POWERPAK-SO-8DC
***roFlash
TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R
***ark
Mosfet, N-Ch, 40V, 100A, 150Deg C, 125W; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Powerrohs Compliant: Yes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Part # Mfg. Description Stock Price
SIDR402DP-T1-GE3
DISTI # V36:1790_21749947		Vishay IntertechnologiesN-Channel 40 V (D-S) MOSFET0
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$1.1529
    • 3000:$1.1673
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2914
    • 500:$1.5586
    • 100:$1.8970
    • 10:$2.3600
    • 1:$2.6300
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 40V PPSO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2914
    • 500:$1.5586
    • 100:$1.8970
    • 10:$2.3600
    • 1:$2.6300
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R (Alt: SIDR402DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€1.0529
    • 500:€1.0809
    • 100:€1.0959
    • 50:€1.1129
    • 25:€1.2539
    • 10:€1.5199
    • 1:€2.1699
    SIDR402DP-T1-GE3
    DISTI # SIDR402DP-T1-GE3    		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR402DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$1.0549
    • 30000:$1.0839
    • 18000:$1.1149
    • 12000:$1.1629
    • 6000:$1.1979
    SIDR402DP-T1-GE3
    DISTI # 59AC7336    		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET0
    • 10000:$1.0300
    • 6000:$1.0700
    • 4000:$1.1200
    • 2000:$1.2400
    • 1000:$1.3100
    • 1:$1.3900
    SIDR402DP-T1-GE3
    DISTI # 78AC6501    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,PowerRoHS Compliant: Yes0
    • 500:$1.4500
    • 250:$1.5600
    • 100:$1.6600
    • 50:$1.8200
    • 25:$1.9800
    • 10:$2.1400
    • 1:$2.5800
    SIDR402DP-T1-GE3
    DISTI # 78-SIDR402DP-T1-GE3    		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		0
    • 1:$2.5500
    • 10:$2.1200
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    • 3000:$1.1100
    • 6000:$1.0700
    SIDR402DP-T1-GE3
    DISTI # 2932896    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W0
    • 500:£1.0600
    • 250:£1.1400
    • 100:£1.2100
    • 10:£1.5700
    • 1:£2.1200
    SIDR402DP-T1-GE3
    DISTI # 2932896    		Vishay IntertechnologiesMOSFET, N-CH, 40V, 100A, 150DEG C, 125W
    RoHS: Compliant    		0
    • 1000:$1.8900
    • 500:$2.0000
    • 250:$2.1300
    • 100:$2.3100
    • 10:$2.6600
    • 1:$3.0500
    Image Part # Description
    SIDR402DP-T1-GE3

    Mfr.#: SIDR402DP-T1-GE3

    OMO.#: OMO-SIDR402DP-T1-GE3

    		 MOSFET 40V Vds 20V Vgs PowerPAK SO-8DC
    SIDR402DP

    Mfr.#: SIDR402DP

    OMO.#: OMO-SIDR402DP-1190

    		 New and Original
    SIDR402DP-T1-GE3

    Mfr.#: SIDR402DP-T1-GE3

    OMO.#: OMO-SIDR402DP-T1-GE3-VISHAY

    		 MOSFET N-CHAN 40V PPSO-8DC
    Availability
    Stock:
    Available
    On Order:
    5000
    Enter Quantity:
    Current price of SIDR402DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.55
    $2.55
    10
    $2.12
    $21.20
    100
    $1.64
    $164.00
    500
    $1.44
    $720.00
    1000
    $1.19
    $1 190.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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