IXFN60N80P

Mfr. #:: IXFN60N80P
Manufacturer:: Littelfuse
Description:: MOSFET N-CH 800V 53A SOT-227B
Lifecycle:: New from this manufacturer.
Datasheet:: IXFN60N80P Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IXFN60N80P more Information

Product Attribute
Attribute Value

Manufacturer: IXYS

Product Category: Module

Series: PolarHV

Packaging: Tube

Unit-Weight: 1.340411 oz

Mounting-Style: SMD/SMT

Tradename: HyperFET

Package-Case: SOT-227-4, miniBLOC

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Chassis Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: SOT-227B

Configuration: Single Dual Source

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 1040W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 800V

Input-Capacitance-Ciss-Vds: 18000pF @ 25V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 53A

Rds-On-Max-Id-Vgs: 140 mOhm @ 30A, 10V

Vgs-th-Max-Id: 5V @ 8mA

Gate-Charge-Qg-Vgs: 250nC @ 10V

Pd-Power-Dissipation: 1040 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 26 ns

Rise-Time: 29 ns

Vgs-Gate-Source-Voltage: 30 V

Id-Continuous-Drain-Current: 53 A

Vds-Drain-Source-Breakdown-Voltage: 800 V

Rds-On-Drain-Source-Resistance: 140 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 110 ns

Typical-Turn-On-Delay-Time: 36 ns

Channel-Mode: Enhancement

Tags: IXFN60, IXFN6, IXFN, IXF

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFN60N80P Description

***p One Stop Global: Trans MOSFET N-CH 800V 53A 4-Pin SOT-227B

***ukat: N-Ch 800V 53A 1040W 0,14R SOT227B

***ark: Mosfet, N Channel, 800V, 53A, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:53A; On Resistance Rds(On):0.14Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

IXFN60N80P More Information

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs: IXYS Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Market price

Part #	Mfg.	Description	Stock	Price
IXFN60N80P DISTI # V79:2366_19815502	IXYS Corporation	Trans MOSFET N-CH 800V 53A 4-Pin SOT-227B RoHS: Compliant	3	500:$18.7000 250:$19.5200 100:$21.4800 25:$23.3400 10:$25.6400 1:$27.9600
IXFN60N80P DISTI # V36:1790_15877430	IXYS Corporation	Trans MOSFET N-CH 800V 53A 4-Pin SOT-227B RoHS: Compliant	0	5000:$16.3700 1000:$18.0100 100:$21.8300 10:$22.5300
IXFN60N80P DISTI # IXFN60N80P-ND	IXYS Corporation	MOSFET N-CH 800V 53A SOT-227B RoHS: Compliant Min Qty: 1 Container: Tube	161In Stock	500:$19.3890 100:$22.1990 30:$23.8850 10:$25.9930 1:$28.1000
IXFN60N80P DISTI # 26703217	IXYS Corporation	Trans MOSFET N-CH 800V 53A 4-Pin SOT-227B RoHS: Compliant	3	1:$27.9600
IXFN60N80P DISTI # 58M7624	IXYS Corporation	MOSFET, N CHANNEL, 800V, 53A, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes	10	1:$15.2400 5:$15.2400 10:$15.2400 25:$15.2400 50:$15.2400 100:$15.2400 250:$15.2400
IXFN60N80P DISTI # 747-IXFN60N80P	IXYS Corporation	MOSFET DIODE Id54 BVdass800 RoHS: Compliant	99	1:$28.1000 5:$26.7000 10:$25.9900 25:$23.8800 50:$22.8700 100:$22.1900 200:$20.3700
IXFN60N80P	IXYS Corporation	53 A, 800 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET	76	64:$15.1560 31:$15.7875 1:$16.4190
IXFN60N80P DISTI # 194350	IXYS Corporation	MOSFET N-CHANNEL 800V 53A SOT227B, EA	558	20:£16.5400 10:£16.8800 5:£17.4900 2:£18.3100 1:£20.3400
IXFN60N80P	IXYS Corporation		300
IXFN60N80P DISTI # IXFN60N80P	IXYS Corporation	Module,single transistor,800V,53A,SOT227B,Ugs: ±30V,screw	8	10:$23.0900 3:$26.2400 1:$29.0500
IXFN60N80P DISTI # IXFN60N80P	IXYS Corporation	N-Ch 800V 53A 1040W 0,14R SOT227B RoHS: Compliant	48	1:€22.2000 5:€19.2000 10:€18.2000 25:€17.5500
IXFN60N80P DISTI # 1427326	IXYS Corporation	MOSFET, N, SOT-227B	168	100:£16.3400 50:£18.6900 10:£19.1600 5:£21.8200 1:£22.5300
IXFN60N80P DISTI # 1427326	IXYS Corporation	MOSFET, N, SOT-227B RoHS: Compliant	171	100:$33.4600 30:$36.0000 10:$39.1800 1:$42.3500

Related products

Image	Part #	Description
	Mfr.#: IXFN64N50PD2 OMO.#: OMO-IXFN64N50PD2	Discrete Semiconductor Modules 64 Amps 500V
	Mfr.#: IXFN60N80P OMO.#: OMO-IXFN60N80P	MOSFET DIODE Id54 BVdass800
	Mfr.#: IXFN64N50P OMO.#: OMO-IXFN64N50P	MOSFET 500V 64A
	Mfr.#: IXFN64N60P OMO.#: OMO-IXFN64N60P	MOSFET 600V 64A
	Mfr.#: IXFN60N120 OMO.#: OMO-IXFN60N120-1190	New and Original
	Mfr.#: IXFN61N50 OMO.#: OMO-IXFN61N50-1190	New and Original
	Mfr.#: IXFN62N80Q3 OMO.#: OMO-IXFN62N80Q3-IXYS-CORPORATION	MOSFET N-CH 800V 49A SOT-227
	Mfr.#: IXFN64N50P OMO.#: OMO-IXFN64N50P-IXYS-CORPORATION	MOSFET N-CH 500V 61A SOT-227
	Mfr.#: IXFN64N60P OMO.#: OMO-IXFN64N60P-IXYS-CORPORATION	MOSFET N-CH 600V 50A SOT-227
	Mfr.#: IXFN64N50PD2 OMO.#: OMO-IXFN64N50PD2-IXYS-CORPORATION	Discrete Semiconductor Modules 64 Amps 500V

Availability

Stock:: Available
On Order:: 3000
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Current price of IXFN60N80P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IXFN60N80P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes