PartNumber | IXFN60N80P | IXFN62N80Q3 | IXFN60N60 |
Description | MOSFET DIODE Id54 BVdass800 | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/49A | MOSFET 600V 60A |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 800 V | 600 V |
Id Continuous Drain Current | 53 A | 49 A | 60 A |
Rds On Drain Source Resistance | 140 mOhms | 140 mOhms | 75 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 1040 W | 960 W | 700 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Height | 9.6 mm | - | 12.22 mm |
Length | 38.23 mm | - | 38.23 mm |
Series | IXFN60N80 | IXFN62N80 | IXFN60N60 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 25.42 mm | - | 25.42 mm |
Brand | IXYS | IXYS | IXYS |
Fall Time | 26 ns | - | 26 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 29 ns | 300 ns | 52 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 110 ns | - | 110 ns |
Typical Turn On Delay Time | 36 ns | - | 43 ns |
Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
Qg Gate Charge | - | 270 nC | 380 nC |
Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
Type | - | - | HiPerFET Power MOSFET |
Forward Transconductance Min | - | - | 40 S |