| PartNumber | IXFN60N80P | IXFN62N80Q3 | IXFN60N60 |
| Description | MOSFET DIODE Id54 BVdass800 | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/49A | MOSFET 600V 60A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | 600 V |
| Id Continuous Drain Current | 53 A | 49 A | 60 A |
| Rds On Drain Source Resistance | 140 mOhms | 140 mOhms | 75 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1040 W | 960 W | 700 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 9.6 mm | - | 12.22 mm |
| Length | 38.23 mm | - | 38.23 mm |
| Series | IXFN60N80 | IXFN62N80 | IXFN60N60 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 25.42 mm | - | 25.42 mm |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 26 ns | - | 26 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 29 ns | 300 ns | 52 ns |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 110 ns | - | 110 ns |
| Typical Turn On Delay Time | 36 ns | - | 43 ns |
| Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
| Qg Gate Charge | - | 270 nC | 380 nC |
| Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
| Type | - | - | HiPerFET Power MOSFET |
| Forward Transconductance Min | - | - | 40 S |