IXFN64N60P

Mfr. #:: IXFN64N60P
Manufacturer:: Littelfuse
Description:: MOSFET 600V 64A
Lifecycle:: New from this manufacturer.
Datasheet:: IXFN64N60P Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IXFN64N60P Datasheet IXFN64N60P Datasheet (P4-P5)
ECAD Model:
More Information:: IXFN64N60P more Information

Product Attribute
Attribute Value

Manufacturer:: IXYS

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Chassis Mount

Package / Case:: SOT-227-4

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 50 A

Rds On - Drain-Source Resistance:: 96 mOhms

Vgs - Gate-Source Voltage:: 30 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 700 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: HiPerFET

Packaging:: Tube

Height:: 9.6 mm

Length:: 38.2 mm

Series:: IXFN64N60

Transistor Type:: 1 N-Channel

Width:: 25.07 mm

Brand:: IXYS

Forward Transconductance - Min:: 63 S

Fall Time:: 24 ns

Product Type:: MOSFET

Rise Time:: 23 ns

Factory Pack Quantity:: 10

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 79 ns

Typical Turn-On Delay Time:: 28 ns

Unit Weight:: 1.058219 oz

Tags: IXFN64, IXFN6, IXFN, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFN64N60P More Information

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs: IXYS Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Market price

Part #	Mfg.	Description	Stock	Price
IXFN64N60P DISTI # V99:2348_15877446	IXYS Corporation	Trans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B RoHS: Compliant	6	500:$16.1300 200:$16.2200 100:$17.8500 50:$18.5799 25:$19.6000 10:$21.5600 5:$22.3299 1:$23.7300
IXFN64N60P DISTI # V36:1790_15877446	IXYS Corporation	Trans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B RoHS: Compliant	0	10000:$13.8700 5000:$13.8800 1000:$15.9900 100:$21.0900 10:$22.0300
IXFN64N60P DISTI # IXFN64N60P-ND	IXYS Corporation	MOSFET N-CH 600V 50A SOT-227 RoHS: Compliant Min Qty: 10 Container: Tube	Temporarily Out of Stock	10:$22.0340
IXFN64N60P DISTI # 27135510	IXYS Corporation	Trans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B RoHS: Compliant	6	1:$23.7300
IXFN64N60P DISTI # 58M7626	IXYS Corporation	MOSFET, N, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:700W RoHS Compliant: Yes	10	250:$17.4400 100:$19.0100 50:$19.5800 25:$20.4500 10:$22.2500 5:$22.8600 1:$24.0600
IXFN64N60P DISTI # 747-IXFN64N60P	IXYS Corporation	MOSFET 600V 64A RoHS: Compliant	297	1:$23.8200 5:$22.6300 10:$22.0300 25:$20.2500 50:$19.3900 100:$18.8200 200:$17.2700
IXFN64N60P DISTI # IXFN64N60P	IXYS Corporation	N-Ch 600V 50A 700W 0,096R SOT227B RoHS: Compliant	9	1:€19.1500 5:€16.1500 10:€15.1500 25:€14.6000
IXFN64N60P DISTI # 1427328	IXYS Corporation	MOSFET, N, SOT-227B	5	100:£13.1800 50:£14.7900 10:£15.4500 5:£17.2600 1:£18.1700
IXFN64N60P DISTI # 1427328	IXYS Corporation	MOSFET, N, SOT-227B RoHS: Compliant	10	100:$28.3600 50:$29.2200 25:$30.5200 10:$33.2000 5:$34.1000 1:$35.9000

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Availability

Stock:: 297
On Order:: 2280
Enter Quantity:

Current price of IXFN64N60P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$23.82~~; ~~$23.82~~

5: ~~$22.63~~; ~~$113.15~~

10: ~~$22.03~~; ~~$220.30~~

25: ~~$20.25~~; ~~$506.25~~

50: ~~$19.39~~; ~~$969.50~~

100: ~~$18.82~~; ~~$1 882.00~~

200: ~~$17.27~~; ~~$3 454.00~~

500: ~~$16.44~~; ~~$8 220.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IXFN64N60P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes