PartNumber | IXFN64N50PD2 | IXFN64N50P | IXFN64N50PD3 |
Description | Discrete Semiconductor Modules 64 Amps 500V | MOSFET 500V 64A | MOSFET N-CH 500V 52A SOT-227B |
Manufacturer | IXYS | IXYS | - |
Product Category | Discrete Semiconductor Modules | MOSFET | - |
RoHS | Y | Y | - |
Product | Power Semiconductor Modules | - | - |
Type | Boost and Buck MOSFET Modules | - | - |
Mounting Style | SMD/SMT | Chassis Mount | - |
Package / Case | SOT-227B | SOT-227-4 | - |
Series | IXFN64N50 | IXFN64N50 | - |
Packaging | Tube | Tube | - |
Brand | IXYS | IXYS | - |
Product Type | Discrete Semiconductor Modules | MOSFET | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
Unit Weight | 1.058219 oz | 1.058219 oz | - |
Technology | - | Si | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 500 V | - |
Id Continuous Drain Current | - | 61 A | - |
Rds On Drain Source Resistance | - | 85 mOhms | - |
Vgs Gate Source Voltage | - | 30 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 700 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Tradename | - | HiPerFET | - |
Height | - | 9.6 mm | - |
Length | - | 38.23 mm | - |
Transistor Type | - | 1 N-Channel | - |
Width | - | 25.42 mm | - |
Forward Transconductance Min | - | 50 S | - |
Fall Time | - | 22 ns | - |
Rise Time | - | 25 ns | - |
Typical Turn Off Delay Time | - | 85 ns | - |
Typical Turn On Delay Time | - | 30 ns | - |