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IPA65R650CEXKSA1

IPA65R650CEXKSA1
Mfr. #:
IPA65R650CEXKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V TO-220FP-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPA65R650CEXKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPA65R650CEXKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Rds On - Drain-Source Resistance:
650 mOhms
Configuration:
Single
Tradename:
CoolMOS
Packaging:
Tube
Height:
16.15 mm
Length:
10.65 mm
Series:
CoolMOS CE
Transistor Type:
1 N-Channel
Width:
4.85 mm
Brand:
Infineon Technologies
Product Type:
MOSFET
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Part # Aliases:
IPA65R650CE SP001295804
Unit Weight:
0.211644 oz
Tags
IPA65R65, IPA65R6, IPA65R, IPA65, IPA6, IPA
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Part # Mfg. Description Stock Price
IPA65R650CEXKSA1
DISTI # V99:2348_06384268		Infineon Technologies AGTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		998
  • 1000:$0.4642
  • 500:$0.6108
  • 100:$0.6774
  • 10:$0.9771
  • 1:$1.1438
IPA65R650CEXKSA1
DISTI # V36:1790_06384268		Infineon Technologies AGTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		0
    IPA65R650CEXKSA1
    DISTI # IPA65R650CEXKSA1-ND    		Infineon Technologies AGMOSFET N-CH 650V TO-220-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		2000In Stock
    • 5000:$0.4515
    • 2500:$0.4741
    • 500:$0.6434
    • 100:$0.7788
    • 25:$0.9480
    • 10:$0.9990
    • 1:$1.1200
    IPA65R650CEXKSA1
    DISTI # 32436008    		Infineon Technologies AGTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
    RoHS: Compliant    		998
    • 1000:$0.4990
    • 500:$0.6566
    • 100:$0.7282
    • 14:$1.0504
    IPA65R650CEXKSA1
    DISTI # 33368663    		Infineon Technologies AGTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
    RoHS: Compliant    		500
    • 1000:$0.4792
    • 500:$0.6069
    • 100:$0.6871
    • 25:$0.8940
    IPA65R650CEXKSA1
    DISTI # IPA65R650CEXKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPA65R650CEXKSA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$0.4089
    • 5000:$0.4169
    • 3000:$0.4309
    • 2000:$0.4469
    • 1000:$0.4639
    IPA65R650CEXKSA1
    DISTI # 13AC9017    		Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes990
    • 500:$0.7710
    • 100:$0.8630
    • 10:$1.1000
    • 1:$1.2700
    IPA65R650CEXKSA1
    DISTI # 726-IPA65R650CEXKSA1    		Infineon Technologies AGMOSFET N-Ch 650V TO-220FP-3
    RoHS: Compliant    		1965
    • 1:$1.0500
    • 10:$0.9030
    • 100:$0.6940
    • 500:$0.6130
    • 1000:$0.4840
    IPA65R650CEXKSA1
    DISTI # 1338582    		Infineon Technologies AGMOSFET COOLMOS CE N-CH 650V 10A TO-220FP, TU500
    • 5000:£0.3960
    • 2500:£0.4040
    • 500:£0.4120
    IPA65R650CEXKSA1
    DISTI # IPA65R650CEXKSA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,7A,28W,TO220FP500
    • 50:$0.4800
    • 10:$0.5100
    • 3:$0.5700
    • 1:$0.6500
    IPA65R650CEXKSA1
    DISTI # 2726042    		Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-220FP-3990
    • 500:£0.4760
    • 250:£0.5080
    • 100:£0.5400
    • 25:£0.7030
    • 5:£0.7840
    IPA65R650CEXKSA1
    DISTI # 2726042    		Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-220FP-3
    RoHS: Compliant    		990
    • 1000:$0.8130
    • 500:$1.0400
    • 100:$1.3400
    • 10:$1.6900
    • 1:$1.9000
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    		 MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
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    OMO.#: OMO-01500322H-LITTELFUSE

    		 Fuse Holder ACS INLINE FUSE HOLDER
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    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of IPA65R650CEXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.05
    $1.05
    10
    $0.90
    $9.03
    100
    $0.69
    $69.40
    500
    $0.61
    $306.50
    1000
    $0.48
    $484.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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