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IRGB4B60KD1PBF

IRGB4B60KD1PBF
Mfr. #:
IRGB4B60KD1PBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V Low-Vceon Non Punch Through
Lifecycle:
New from this manufacturer.
Datasheet:
IRGB4B60KD1PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB4B60KD1PBF DatasheetIRGB4B60KD1PBF Datasheet (P4-P6)IRGB4B60KD1PBF Datasheet (P7-P9)IRGB4B60KD1PBF Datasheet (P10-P12)IRGB4B60KD1PBF Datasheet (P13-P15)IRGB4B60KD1PBF Datasheet (P16)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
IGBTs - Single
Series
-
Packaging
Tube
Unit-Weight
0.211644 oz
Mounting-Style
Through Hole
Package-Case
TO-220-3
Input-Type
Standard
Mounting-Type
Through Hole
Supplier-Device-Package
TO-220AB
Configuration
Single
Power-Max
63W
Reverse-Recovery-Time-trr
93ns
Current-Collector-Ic-Max
11A
Voltage-Collector-Emitter-Breakdown-Max
600V
IGBT-Type
NPT
Current-Collector-Pulsed-Icm
22A
Vce-on-Max-Vge-Ic
2.5V @ 15V, 4A
Switching-Energy
73μJ (on), 47μJ (off)
Gate-Charge
12nC
Td-on-off-25°C
22ns/100ns
Test-Condition
400V, 4A, 100 Ohm, 15V
Pd-Power-Dissipation
63 W
Minimum-Operating-Temperature
- 55 C
Collector-Emitter-Voltage-VCEO-Max
600 V
Collector-Emitter-Saturation-Voltage
2.5 V
Continuous-Collector-Current-at-25-C
12 A
Maximum-Gate-Emitter-Voltage
+/- 20 V
Tags
IRGB4B, IRGB4, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package
***et
Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-220AB
***ineon
Target Applications: Dishwasher; Fan; Lighting HID; Pump; Refridgeration; Solar
***roFlash
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***or
IRGB4B60K - IGBT WITH ULTRAFAST
***S
French Electronic Distributor since 1988
***ical
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***ineon
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***ernational Rectifier
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***ark
IGBT; Transistor Type:IGBT; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***nell
IGBT, 600V, 9A, TO-220FP; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.2V; Power Dissipation:32W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:22A; Power, Pd:32W; Time, Fall:22ns; Time, Fall Max:22ns; Time, Rise:17ns
***ical
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***S.I.T. Europe - USA - Asia
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***el Electronic
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***ark
IGBT, TO-220FP; Continuous Collector Current:11A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:28W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
***ure Electronics
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***Yang
Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ernational Rectifier
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
***ment14 APAC
IGBT, 600V, 12A, TO-220FP; Transistor Type:IGBT; DC Collector Current:12A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:39W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:12A; Fall Time Max:42ns; Fall Time tf:42ns; Package / Case:TO-220FP; Power Dissipation Max:39W; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulsed Current Icm:24A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 8A 56000mW 3-Pin(3+Tab) TO-220AB Tube
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600V UltraFast Copack Trench IGBT in a TO-220AB package
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
SINGLE IGBT, 600V; Transistor Type: IGBT; DC Collector Current: 8A; Collector Emitter Voltage Vces: 600V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; No. of Pins: 3; C-E Breakdown Voltage: 2.2V
***ical
Trans IGBT Chip N-CH 600V 10A 25000mW 3-Pin(3+Tab) TO-220FP Tube
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STGF7NC60HD Series 600 V 10 A N-Channel Very Fast PowerMESH IGBT - TO-220FP
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220FP; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
***ark
N CH IGBT, PowerMESH, 600V, 10A, TO-220FP; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***et
Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UD series si designed for applications such as motor control and general inverters where high speed switching is a required feature.
Part # Mfg. Description Stock Price
IRGB4B60KD1PBF
DISTI # IRGB4B60KD1PBF-ND		Infineon Technologies AGIGBT 600V 11A 63W TO220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    IRGB4B60KD1PBF
    DISTI # 70017212    		Infineon Technologies AG600V Low-VCEON Non Punch Through COPACK IGBT IN A TO-220 FULLPAK Package
    RoHS: Compliant    		0
    • 500:$3.4600
    • 1000:$3.3910
    • 2500:$3.2870
    • 5000:$3.1490
    • 12500:$2.9410
    IRGB4B60KD1PBF
    DISTI # 942-IRGB4B60KD1PBF    		Infineon Technologies AGIGBT Transistors 600V Low-Vceon Non Punch Through
    RoHS: Compliant    		9
    • 1:$1.8800
    • 10:$1.6000
    • 100:$1.2800
    • 500:$1.1200
    • 1000:$0.9270
    • 2500:$0.8630
    • 5000:$0.8310
    • 10000:$0.7990
    IRGB4B60KD1PBFInternational Rectifier 200
      Image Part # Description
      IRGB4B60KPBF

      Mfr.#: IRGB4B60KPBF

      OMO.#: OMO-IRGB4B60KPBF

      		 IGBT Transistors 600V Low VCEon
      IRGB4B60KD1PBF

      Mfr.#: IRGB4B60KD1PBF

      OMO.#: OMO-IRGB4B60KD1PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors 600V Low-Vceon Non Punch Through
      IRGB4B60KPBF

      Mfr.#: IRGB4B60KPBF

      OMO.#: OMO-IRGB4B60KPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors 600V Low VCEon
      IRGB4B60K

      Mfr.#: IRGB4B60K

      OMO.#: OMO-IRGB4B60K-1190

      		 New and Original
      Availability
      Stock:
      Available
      On Order:
      4500
      Enter Quantity:
      Current price of IRGB4B60KD1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.20
      $1.20
      10
      $1.14
      $11.39
      100
      $1.08
      $107.87
      500
      $1.02
      $509.35
      1000
      $0.96
      $958.80
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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