IRF3007PBF

Mfr. #:: IRF3007PBF
Manufacturer:: Infineon Technologies
Description:: MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF3007PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF3007PBF Datasheet IRF3007PBF Datasheet (P4-P6)IRF3007PBF Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 75 V

Id - Continuous Drain Current:: 80 A

Rds On - Drain-Source Resistance:: 12.6 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 89 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 200 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Transistor Type:: 1 N-Channel

Type:: Automotive MOSFET

Width:: 4.4 mm

Brand:: Infineon Technologies

Fall Time:: 49 ns

Product Type:: MOSFET

Rise Time:: 80 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 55 ns

Typical Turn-On Delay Time:: 12 ns

Part # Aliases:: SP001571144

Unit Weight:: 0.211644 oz

Tags: IRF3007P, IRF3007, IRF300, IRF30, IRF3, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF3007PBF Description

***ure Electronics: Single N-Channel 75 V 12.6 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***(Formerly Allied Electronics): MOSFET, 75V, 80A, 12.6 MOHM, 89 NC QG, TO-220AB

***Yang: Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***el Electronic: Power Field-Effect Transistor, 75A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 75V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.74°C/W; On State resistance @ Vgs = 10V:12.6ohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de

***ure Electronics: Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ment14 APAC: MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 89A;TO-220AB;PD 170W;-55deg

***ure Electronics: Single N-Channel 75 V 9.4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 75V 89A 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 75V, 89A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:75V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:9.4ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S

***ure Electronics: Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200

***ment14 APAC: MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel Power MOSFET, UniFETTM, 60 V, 80 A, 10 mΩ, TO-220

***et Europe: Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 60 V 10 mOhm Flange Mount Mosfet - TO-220

***nell: MOSFET, N-CH, 60V, 80A, 175DEG C, 176W; Available until stocks are exhausted

***r Electronics: Power Field-Effect Transistor, 80A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ure Electronics: N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

***emi: N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ

***Yang: Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***enic: 55V 75A 12m´Î@10V75A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:12mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.

***emi: Power MOSFET, N-Channel, QFET®, 60 V, 85 A, 10 mΩ, TO-220

***ure Electronics: N-Channel 60 V 10 mO 160 W Flange Mount Mosfet - TO-220

***et Europe: Trans MOSFET N-CH 60V 85A 3-Pin(3+Tab) TO-220AB Rail

***r Electronics: Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:85A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:SOT-78B; Current, Idm Pulse:300A; Device Marking:FQP85N06; No. of Pins:3; Power Dissipation:160W; Power, Pd:160W; Resistance, Rds on Max:0.01ohm; Voltage, Vds Max:60V; Voltage, Vgs th Max:4V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Market price

Part #	Mfg.	Description	Stock	Price
IRF3007PBF DISTI # IRF3007PBF-ND	Infineon Technologies AG	MOSFET N-CH 75V 75A TO-220AB RoHS: Compliant Min Qty: 3000 Container: Tube	Temporarily Out of Stock	3000:$1.2140
IRF3007PBF DISTI # IRF3007PBF	Infineon Technologies AG	Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3007PBF) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	3000:$0.9419 5000:$0.9079 8000:$0.8749 15000:$0.8459 30000:$0.8309
IRF3007PBF DISTI # SP001571144	Infineon Technologies AG	Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-220AB (Alt: SP001571144) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.0979 10:€0.9979 25:€0.9149 50:€0.8779 100:€0.8439 500:€0.8129 1000:€0.7839
IRF3007PBF DISTI # 70018183	Infineon Technologies AG	MOSFET,75V,80A,12.6 MOHM,89 NC QG,TO-220AB RoHS: Compliant	0	3000:$1.0400
IRF3007PBF	International Rectifier	RoHS: Not Compliant	2850	1000:$1.0800 500:$1.1400 100:$1.1800 25:$1.2300 1:$1.3300
IRF3007PBF DISTI # 942-IRF3007PBF	Infineon Technologies AG	MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS: Compliant	2870	1:$2.4100 10:$2.0500 100:$1.6400 500:$1.4400 1000:$1.1900 2000:$1.1100
IRF3007PBF DISTI # IRF3007PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,75V,80A,200W,TO220AB	13	1:$1.9400 3:$1.6500 10:$1.3900 100:$1.2600
IRF3007PBF	International Rectifier	RoHS: Compliant	Europe - 300

Image	Part #	Description
	Mfr.#: IRFB7446PBF OMO.#: OMO-IRFB7446PBF	MOSFET 40V 118A 3.3 mOhm HEXFET 62nC 99W
	Mfr.#: IRF7748L1TRPBF OMO.#: OMO-IRF7748L1TRPBF	MOSFET 60V N-Ch 139A 2.15 mOhm 147nC
	Mfr.#: HUF75639P3 OMO.#: OMO-HUF75639P3	MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm
	Mfr.#: IRFB3006PBF OMO.#: OMO-IRFB3006PBF	MOSFET MOSFT 60V 270A 2.5mOhm 200nC Qg
	Mfr.#: IRL1004PBF OMO.#: OMO-IRL1004PBF	MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB
	Mfr.#: IRFB7730PBF OMO.#: OMO-IRFB7730PBF	MOSFET 75V Single N-Channel HEXFET Power
	Mfr.#: IRFB7437PBF OMO.#: OMO-IRFB7437PBF	MOSFET 40V 2.0mOhm 195A HEXFET 230W 150nC
	Mfr.#: IRFB3306PBF OMO.#: OMO-IRFB3306PBF	MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg
	Mfr.#: IRFB7537PBF OMO.#: OMO-IRFB7537PBF	MOSFET MOSFET N CH 60V 173A TO-220AB
	Mfr.#: UC3842BN OMO.#: OMO-UC3842BN	Switching Controllers 0.5mA Current Mode

IRF3007PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes