SI4174DY-T1-GE3

Mfr. #:: SI4174DY-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 30V 17A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: SI4174DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI4174DY-T1-GE3 more Information

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Tags: SI4174DY-T, SI4174, SI417, SI41, SI4

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SI4174DY-T1-GE3 Description

***et Europe: Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ment14 APAC: MOSFET,N CH,30V,17A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V

SI4174DY-T1-GE3 More Information

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4174DY-T1-GE3 DISTI # 33943416	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant	2500	2500:$0.2430
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.3015 12500:$0.3095 5000:$0.3214 2500:$0.3452
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2500In Stock	1000:$0.3923 500:$0.4904 100:$0.6203 10:$0.8090 1:$0.9200
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 17A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2500In Stock	1000:$0.3923 500:$0.4904 100:$0.6203 10:$0.8090 1:$0.9200
SI4174DY-T1-GE3 DISTI # V36:1790_09215542	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant	0	2500000:$0.3136 1250000:$0.3138 250000:$0.3249 25000:$0.3423 2500:$0.3452
SI4174DY-T1-GE3 DISTI # V72:2272_09215542	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2939 15000:$0.3029 10000:$0.3109 5000:$0.3239 2500:$0.3339
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2599 15000:€0.2789 10000:€0.3019 5000:€0.3509 2500:€0.5149
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4174DY-T1-GE3 DISTI # 90R9128	Vishay Intertechnologies	MOSFET,N CHANNEL,30V,17A,SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: Yes	0	1000:$0.3720 500:$0.4650 100:$0.5630 50:$0.6220 25:$0.6820 10:$0.7410 1:$0.9290
SI4174DY-T1-GE3 DISTI # 781-SI4174DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	2777	1:$0.9100 10:$0.7330 100:$0.5560 500:$0.4600 1000:$0.3680 2500:$0.3330 5000:$0.3100 10000:$0.2990
SI4174DY-T1-GE3	Vishay Intertechnologies		10000
SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,30V,13.5A,3.2W,SO8	41	500:$0.3300 100:$0.3600 25:$0.3900 5:$0.4500 1:$0.6000
SI4174DYT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	2500
SI4174DY-T1-GE3 DISTI # SI4174DY-GE3	Vishay Intertechnologies	N-Ch 30V 17A 2,5W 0,0095R SO8 RoHS: Compliant	350	50:€0.3150 100:€0.2550 500:€0.2250 2500:€0.2180
SI4174DY-T1-GE3 DISTI # 1840422	Vishay Intertechnologies	MOSFET,N CH,30V,17A,SO8 RoHS: Compliant	0	1000:$0.5920 500:$0.7390 100:$0.9350 5:$1.2200
SI4174DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8	Americas -	2500:$0.3330 5000:$0.3150 10000:$0.3050 20000:$0.2980
SI4174DY-T1-GE3 DISTI # 1840422	Vishay Intertechnologies	MOSFET,N CH,30V,17A,SO8	0	500:£0.3550 250:£0.3920 100:£0.4290 10:£0.6190 1:£0.8100

Image	Part #	Description
	Mfr.#: SI4174DY-T1-GE3 OMO.#: OMO-SI4174DY-T1-GE3	MOSFET 30V Vds 20V Vgs SO-8
	Mfr.#: SI4174DY OMO.#: OMO-SI4174DY-1190	New and Original
	Mfr.#: SI4174DY-T1-E3 OMO.#: OMO-SI4174DY-T1-E3-1190	New and Original
	Mfr.#: SI4174DY-T1-GE1 OMO.#: OMO-SI4174DY-T1-GE1-1190	New and Original
	Mfr.#: SI4174DY-T1-GE3 OMO.#: OMO-SI4174DY-T1-GE3-VISHAY	MOSFET N-CH 30V 17A 8-SOIC

SI4174DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes