FGA30S120P

FGA30S120P
Mfr. #:
FGA30S120P
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors Shorted AnodeTM IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
FGA30S120P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FGA30S120P more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-3PN
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1300 V
Collector-Emitter Saturation Voltage:
2.3 V
Maximum Gate Emitter Voltage:
25 V
Continuous Collector Current at 25 C:
60 A
Pd - Power Dissipation:
174 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
FGA30S120P
Packaging:
Tube
Continuous Collector Current Ic Max:
60 A
Brand:
ON Semiconductor / Fairchild
Gate-Emitter Leakage Current:
500 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
450
Subcategory:
IGBTs
Unit Weight:
0.225789 oz
Tags
FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
IGBT 1300V 60A 348W TO3P / Trans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3P Tube
***nell
IGBT, 1.3KV, 60A, 175DEG C, 348W; Available until stocks are exhausted
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***nell
IGBT, 1.3KV, 60A, 175DEG C, 500W; Available until stocks are exhausted Alternative available
***(Formerly Allied Electronics)
FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247 | ON Semiconductor FGH30S130P
***rchild Semiconductor
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
***ical
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
***Parts
IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole
***ure Electronics
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
***nell
IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
***ical
Trans IGBT Chip N-CH 1200V 60A 305000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***or
IRG8P40N120 - DISCRETE IGBT WITH
***ark
G8, 1200V, 40A, COPAK-247AC, TUBE
***el Electronic
CAP CER 4PF 100V C0G/NP0 RADIAL
***ark
Igbt Single Transistor, 63 A, 1.3 Kv, 250 W, 1.3 Kv, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1300V 63A 250000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1300V, 63A, 250W, TO247; DC Collector Current: 63A; Collector Emitter Saturation Voltage Vce(on): 1.3kV; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 1.3kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Transistor Type: IGBT
***et
Trans IGBT Chip N-CH 1.3KV 63A 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
33 A - 1300 V - very fast IGBT
***el Electronic
IGBT Transistors 33A 1300V VF IGBT PowerMESH IGBT
***S
French Electronic Distributor since 1988
***r Electronics
Insulated Gate Bipolar Transistor
***et
Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247
***nell
IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 349W; Collector Emitter Voltage V(br)ceo: 1.35k; Available until stocks are exhausted
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
Shorted Anode™ Trench IGBTs
ON Semiconductor Shorted Anode Trench IGBTs™ deliver superior conduction, switching performances, and easy parallel operation with exceptional avalanche capability. Fairchild Shorted Anode Trench IGBTs feature Field Stop Trench and Shorted Anode technology and are designed for induction heating, microwave oven applications, and soft switching applications.Learn More
Part # Mfg. Description Stock Price
FGA30S120P
DISTI # V99:2348_06359130
ON SemiconductorTrans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail892
  • 5000:$2.1960
  • 2500:$2.2720
  • 1000:$2.3730
  • 500:$2.7460
  • 250:$2.9990
  • 100:$3.1410
  • 10:$3.5010
  • 1:$4.0250
FGA30S120P
DISTI # FGA30S120P-ND
ON SemiconductorIGBT 1300V 60A 348W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube
450In Stock
  • 1350:$2.5725
  • 900:$3.0503
  • 450:$3.3994
  • 10:$4.3730
  • 1:$4.8700
FGA30S120P
DISTI # 26398855
ON SemiconductorTrans IGBT Chip N-CH 1300V 60A 348000mW 3-Pin(3+Tab) TO-3PN Rail892
  • 500:$2.7420
  • 250:$2.9939
  • 100:$3.1360
  • 10:$3.4940
  • 3:$4.0170
FGA30S120P
DISTI # FGA30S120P
ON SemiconductorTrans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA30S120P)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$2.1900
  • 900:$2.1900
  • 1800:$2.1900
  • 2700:$2.1900
  • 4500:$2.0900
FGA30S120P
DISTI # 95T0023
ON SemiconductorSA2TIGBT TO3PN 30A 1200V / TUBE0
  • 1:$5.0800
  • 10:$4.1200
  • 100:$3.4200
  • 500:$3.0900
  • 1000:$2.6300
  • 2500:$2.5100
  • 10000:$2.3700
FGA30S120P
DISTI # 512-FGA30S120P
ON SemiconductorIGBT Transistors Shorted AnodeTM IGBT
RoHS: Compliant
375
  • 1:$4.6300
  • 10:$3.9300
  • 100:$3.4100
  • 250:$3.2300
  • 500:$2.9000
FGA30S120PFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 1300V V(BR)CES, N-Channel
RoHS: Compliant
2700
  • 1000:$2.5500
  • 500:$2.6900
  • 100:$2.8000
  • 25:$2.9200
  • 1:$3.1400
FGA30S120P
DISTI # 8648789P
ON SemiconductorIGBT 1200V 30A SHORTED-ANODE TO3PN, TU204
  • 10:£3.5950
  • 40:£3.1450
  • 100:£2.9400
  • 200:£2.8050
FGA30S120P
DISTI # 8648789
ON SemiconductorIGBT 1200V 30A SHORTED-ANODE TO3PN, PK30
  • 2:£4.0800
  • 10:£3.5950
  • 40:£3.1450
  • 100:£2.9400
  • 200:£2.8050
FGA30S120P
DISTI # C1S226600774282
ON SemiconductorTrans IGBT Chip N-CH 1.3KV 60A 3-Pin(3+Tab) TO-3PN Rail
RoHS: Compliant
892
  • 500:$2.7420
  • 250:$2.9939
  • 100:$3.1360
  • 10:$3.4940
  • 1:$4.0170
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MCP4022T-103E/CH

Mfr.#: MCP4022T-103E/CH

OMO.#: OMO-MCP4022T-103E-CH

Digital Potentiometer ICs 10k U/D single 6-bit NV Rheostat
IRS2092STRPBF

Mfr.#: IRS2092STRPBF

OMO.#: OMO-IRS2092STRPBF

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Mfr.#: 5KP30A

OMO.#: OMO-5KP30A

TVS Diodes / ESD Suppressors 30Vso 23VAC 103A
NGD8201ANT4G

Mfr.#: NGD8201ANT4G

OMO.#: OMO-NGD8201ANT4G

IGBT Transistors NGD8201ANT4G GEN4 IGBT
FGA30N120FTDTU

Mfr.#: FGA30N120FTDTU

OMO.#: OMO-FGA30N120FTDTU

IGBT Transistors 1200V 30A FS
FGH60N60SFDTU

Mfr.#: FGH60N60SFDTU

OMO.#: OMO-FGH60N60SFDTU

IGBT Transistors N-Ch/ 60A 600V FS
FCP36N60N

Mfr.#: FCP36N60N

OMO.#: OMO-FCP36N60N

MOSFET 600V NChannel MOSFET SupreMOS
TNY285DG-TL

Mfr.#: TNY285DG-TL

OMO.#: OMO-TNY285DG-TL

AC/DC Converters 11.5 W (85-265 VAC) 15 W (230 VAC)
UCC28600DR

Mfr.#: UCC28600DR

OMO.#: OMO-UCC28600DR

AC/DC Converters Quasi Res Flyback Green Mode Cntrlr
5KP30A

Mfr.#: 5KP30A

OMO.#: OMO-5KP30A-1110

TVS Diodes - Transient Voltage Suppressors 30Vso 23VAC 103A
Availability
Stock:
318
On Order:
2301
Enter Quantity:
Current price of FGA30S120P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.10
$4.10
10
$3.48
$34.80
100
$3.02
$302.00
250
$2.86
$715.00
500
$2.57
$1 285.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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