BSB008NE2LX

Mfr. #:: BSB008NE2LX
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSB008NE2LX Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: WDSON-2-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 25 V

Id - Continuous Drain Current:: 180 A

Rds On - Drain-Source Resistance:: 600 uOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 343 nC

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 89 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Tradename:: OptiMOS

Packaging:: Reel

Height:: 0.7 mm

Length:: 6.35 mm

Transistor Type:: 1 N-Channel

Width:: 5.05 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 120 S

Fall Time:: 32.4 ns

Moisture Sensitive:: Yes

Product Type:: MOSFET

Rise Time:: 47.2 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 75 ns

Typical Turn-On Delay Time:: 12.6 ns

Part # Aliases:: BSB008NE2LXXUMA1 BSB8NE2LXXT SP000880866

Tags: BSB00, BSB0, BSB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSB008NE2LX Description

***ical: Trans MOSFET N-CH 25V 46A 7-Pin WDSON T/R

***ineon SCT: With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs, MG-WDSON-2, RoHS

***ineon: With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and hot-swap application. CanPAK package allows double sided cooling in thermally challenging applications. With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Lowest on-state resistance; High DC and pulsed current capability; Easy to design in; Double side cooling | Benefits: Increased battery lifetime/system efficiency; Saving space (reducing the number of devices needed); Saving costs | Target Applications: Or-ing in power supply; Hot-swap; e-fuse; Battery management

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;TO-220AB;PD 94W;-55deg

***fin: Transistor NPN Field Effect IRFZ44/IRFZ44N INTERNATIONAL RECTIFIER Ampere=46 V=250 TO220

***ure Electronics: Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 41A/55V TO220 IRFZ 44 NPBF

***p One Stop: Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 250 W

*** Stop Electro: Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:49A; On Resistance, Rds(on):17.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.1V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 55V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:49A; Current Temperature:25°C; Device Marking:IRFZ44NPBF; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V

***eco: Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;TO-220AB;PD 2.5W

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***id Electronics: Transistor MOSFET N-Ch. 59A/100V TO220 IRF 3710 PBF

***ter Electronics: MOSFET, 100V, 57A, 23 MOHM, 86.7 NC QG, TO-220AB

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

***roFlash: Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg

***eco: Transistor MOSFET N Channel 100 Volt 59 Amp 3-Pin 3+ Tab TO-220AB

***ure Electronics: Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 100V 59A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W

*** Stop Electro: Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

***ark: Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. of Pins:3Pins RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:170mJ; Capacitance Ciss Typ:2900pF; Current Id Max:59A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:18mohm; Package / Case:TO-220AB; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Power Dissipation Ptot Max:160W; Pulse Current Idm:240A; Reverse Recovery Time trr Typ:50ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

*** Source Electronics: MOSFET P-CH 40V 50A DPAK / Trans MOSFET P-CH 40V 50A 3-Pin(2+Tab) DPAK

***roFlash: Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, P CH, -40V, -50A, TO-252AA; Transistor Polarity: P Channel; Continuous Drain Current Id: -50A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.0067ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 73.5W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015); Operating Temperature Min: -55°C

***(Formerly Allied Electronics): IRFZ44PBF N-channel MOSFET Transistor; 50 A; 60 V; 3-Pin TO-220AB

***ure Electronics: Single N-Channel 60 V 0.028 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 60V 50A 3-Pin (3+Tab) TO-220AB

***roFlash: Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: N CHANNEL MOSFET, 60V, 50A; Transistor P; N CHANNEL MOSFET, 60V, 50A; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***eco: Transistor RFP50N06 N-Channel MOSFET 60 Volt 50 Amp TO-220AB

***ure Electronics: N-Channel 60 V 0.022 Ohm Flange Mount Power Mosfet - TO-220AB

***Yang: Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***emi: N-Channel Power MOSFET 60V, 50A, 22mΩ

***r Electronics: Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:131W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Current Temperature:25°C; Device Marking:RFP50N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:22mohm; Package / Case:TO-220AB; Power Dissipation Pd:131W; Power Dissipation Pd:131W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49018.

*** Source Electronics: Trans MOSFET N-CH Si 25V 38A 7-Pin Direct-FET MX T/R / MOSFET N-CH 25V 38A DIRECTFET

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ment14 APAC: N CH MOSFET, 25V, 38A, DIRECTFET MX; Tra; N CH MOSFET, 25V, 38A, DIRECTFET MX; Transistor Polarity:(Not Available); Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V

***ure Electronics: Dual N-Channel 25 V 3.2 mOhm 15 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 25V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package, PG-TISON-8, RoHS

*** Source Electronics: Trans MOSFET N-CH 25V 64A/188A 8-Pin PQFN EP T/R / MOSFET 2N-CH 25V 64A/188A PQFN

***et: Transistor MOSFET Array Dual N-CH 25V 188A 8-Pin PQFN T/R

***(Formerly Allied Electronics): MOSFET; 25V; 45 A Power Block in PQFN 5x6 package

***ineon: Benefits: RoHS Compliant; Qualified Industrial; Qualified MSL1; Dual N-Channel MOSFET; Control and Synchronous MOSFETs in one package; Low Charge Control MOSFET; Low Rdson Synchronous MOSFET; Intrinsic Schottky diode with Low Forward Voltage on Q2; FastIRFET | Target Applications: Point of Load

***(Formerly Allied Electronics): A 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 36

***Yang: Trans MOSFET N-CH 25V 36A 7-Pin Direct-FET MX T/R - Tape and Reel

***ronik: N-CH 25V 36A 1,1mOhm DirectFET RoHSconf

***ineon: Target Applications: MultiPhase SyncFET

*** Electronic Components: MOSFET 25V SINGLE N-CH 20V VGS MAX

***el Electronic: MOSFET N-CH 25V 36A DIRECTFET-MX

***ark: N Channel, MOSFET, 25V, 36A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes

***emi: Power MOSFET 25 V, 124 A, Single N-Channel

***r Electronics: Power Field-Effect Transistor, 15.7A I(D), 25V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 25V 15.7A/128A DPAK

***icroelectronics: N-channel 30 V, 0.00081 Ohm typ., 220 A STripFET H7 Power MOSFET in a PowerFLAT 5x6 package

***ure Electronics: N-Channel 30 V 0.0011 O 46 nC 113 W STripFET VII Power MosFet - PowerFLAT(5 x 6)

***ical: Trans MOSFET N-CH 30V 220A 8-Pin Power Flat EP T/R

***ronik: N-CH 30V 220A 1,1mOhm PwFLAT5x6

***el Electronic: IC REG LIN POS ADJ 150MA SOT23-5

***emi: PowerTrench® MOSFET, N-Channel, 30V, 160A, 3.9mΩ

*** Stop Electro: Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Market price

Part #	Mfg.	Description	Stock	Price
BSB008NE2LXXUMA1 DISTI # BSB008NE2LXXUMA1-ND	Infineon Technologies AG	MOSFET N-CH 25V 46A 2WDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$1.1082
BSB008NE2LXXT DISTI # BSB008NE2LXXUMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 46A 7-Pin WDSON - Tape and Reel (Alt: BSB008NE2LXXUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.8929 10000:$0.8609 20000:$0.8289 30000:$0.8019 50000:$0.7869
BSB008NE2LXXUMA1 DISTI # SP000880866	Infineon Technologies AG	Trans MOSFET N-CH 25V 46A 7-Pin WDSON-2 T/R (Alt: SP000880866) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€1.1329 10000:€0.8799 20000:€0.8169 30000:€0.7909 50000:€0.7609
BSB008NE2LX DISTI # 726-BSB008NE2LXXT	Infineon Technologies AG	MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS RoHS: Compliant	2437	1:$2.2800 10:$1.9300 100:$1.5500 500:$1.3500 1000:$1.1200 2500:$1.0400 5000:$1.0000
BSB008NE2LXXUMA1 DISTI # 726-BSB008NE2LX	Infineon Technologies AG	MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS RoHS: Compliant	0	1:$2.2800 10:$1.9300 100:$1.5500 500:$1.3500 1000:$1.1200 2500:$1.0400 5000:$1.0000
BSB008NE2LXXT DISTI # 726-BSB008NE2LXXUMA1	Infineon Technologies AG	MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS RoHS: Compliant	0	5000:$1.0000
BSB008NE2LX	Infineon Technologies AG		100
BSB008NE2LX	Infineon Technologies AG	25V,0.8m,180A,N-Channel Power MOSFET	100	1:$1.6400 100:$1.3700 500:$1.2100 1000:$1.1700

Image	Part #	Description
	Mfr.#: AD623ARMZ OMO.#: OMO-AD623ARMZ	Instrumentation Amplifiers SINGLE SUPPLY RR
	Mfr.#: CAT4109V-GT2 OMO.#: OMO-CAT4109V-GT2	LED Lighting Drivers LED Driver 3ch RGB PWM
	Mfr.#: FAN3122TMX OMO.#: OMO-FAN3122TMX	Gate Drivers Single 9A High Speed Low Side Gate
	Mfr.#: CSD16340Q3 OMO.#: OMO-CSD16340Q3	MOSFET N Channel NexFET Power MOSFET
	Mfr.#: NVTFS5124PLTAG OMO.#: OMO-NVTFS5124PLTAG	MOSFET PFET U8FL 60V 8A 260MOHM
	Mfr.#: RC0805JR-070RL OMO.#: OMO-RC0805JR-070RL	Thick Film Resistors - SMD ZERO OHM JUMPER
	Mfr.#: 7460307 OMO.#: OMO-7460307	Terminals WP-BUTR Pin-Plate 8Pin 2Row M4 160A
	Mfr.#: SL22 5R012 OMO.#: OMO-SL22-5R012-AMETHERM	Inrush Current Limiters 22mm 5ohms 12A INRSH CURR LIMITER
	Mfr.#: AD623ARMZ OMO.#: OMO-AD623ARMZ-ANALOG-DEVICES-INC-ADI	Instrumentation Amplifiers SINGLE SUPPLY RR
	Mfr.#: 52418-0410 OMO.#: OMO-52418-0410-418	Board to Board & Mezzanine Connectors 4 CKT R/A RECEPTICAL 125V 1.5A

BSB008NE2LX

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes