IPP65R110CFD

IPP65R110CFD
Mfr. #:
IPP65R110CFD
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
Lifecycle:
New from this manufacturer.
Datasheet:
IPP65R110CFD Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPP65R110CFD more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
31.2 A
Rds On - Drain-Source Resistance:
110 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
118 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
277.8 W
Configuration:
Single
Tradename:
CoolMOS
Packaging:
Tube
Height:
15.65 mm
Length:
10 mm
Series:
CoolMOS CFD2
Transistor Type:
1 N-Channel
Width:
4.4 mm
Brand:
Infineon Technologies
Fall Time:
6 nS
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
68 nS
Part # Aliases:
IPP65R110CFDXKSA1 IPP65R11CFDXK SP000895226
Unit Weight:
0.211644 oz
Tags
IPP65R11, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPP65R110CFDXKSA1
DISTI # IPP65R110CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 700V 31.2A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 1000:$3.3064
  • 500:$3.9204
  • 100:$4.8415
  • 10:$5.9040
  • 1:$6.6100
IPP65R110CFDXKSA1
DISTI # SP000895226
Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin TO-220 Tube (Alt: SP000895226)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 100
  • 1:€3.1900
  • 10:€2.8900
  • 25:€2.7900
  • 50:€2.6900
  • 100:€2.5900
  • 500:€2.4900
  • 1000:€2.2900
IPP65R110CFDXKSA1
DISTI # IPP65R110CFDXKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$2.9900
  • 1000:$2.8900
  • 2000:$2.7900
  • 3000:$2.6900
  • 5000:$2.6900
IPP65R110CFDXKSA1
DISTI # 13AC9085
Infineon Technologies AGMOSFET, N-CH, 650V, 31.2A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:31.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.099ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes460
  • 500:$4.3300
  • 250:$4.6700
  • 100:$5.2500
  • 50:$5.6000
  • 25:$5.9600
  • 10:$6.3100
  • 1:$7.0200
IPP65R110CFD
DISTI # 726-IPP65R110CFD
Infineon Technologies AGMOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
RoHS: Compliant
0
  • 1:$5.6800
  • 10:$4.8300
  • 100:$4.1800
  • 250:$3.9700
  • 500:$3.5600
IPP65R110CFDXKSA1
DISTI # 2726071
Infineon Technologies AGMOSFET, N-CH, 650V, 31.2A, TO-220-3
RoHS: Compliant
457
  • 1000:$4.9100
  • 500:$5.8300
  • 100:$7.1900
  • 10:$8.7700
  • 1:$9.8200
IPP65R110CFDXKSA1
DISTI # 2726071
Infineon Technologies AGMOSFET, N-CH, 650V, 31.2A, TO-220-3
RoHS: Compliant
457
  • 100:£4.3300
  • 10:£5.2800
  • 1:£6.5100
Image Part # Description
IPP65R150CFDAAKSA1

Mfr.#: IPP65R150CFDAAKSA1

OMO.#: OMO-IPP65R150CFDAAKSA1

MOSFET N-Ch 650V 22.4A TO220-3
IPP65R065C7XKSA1

Mfr.#: IPP65R065C7XKSA1

OMO.#: OMO-IPP65R065C7XKSA1

MOSFET HIGH POWER_NEW
IPP65R660CFDAAKSA1

Mfr.#: IPP65R660CFDAAKSA1

OMO.#: OMO-IPP65R660CFDAAKSA1

MOSFET N-Ch 650V 6A TO220-3
IPP65R600C6XKSA1

Mfr.#: IPP65R600C6XKSA1

OMO.#: OMO-IPP65R600C6XKSA1

MOSFET N-Ch 700V 7.3A TO220-3 CoolMOS C6
IPP65R420CFDXKSA2

Mfr.#: IPP65R420CFDXKSA2

OMO.#: OMO-IPP65R420CFDXKSA2-INFINEON-TECHNOLOGIES

LOW POWER_LEGACY
IPP65R110CFDA

Mfr.#: IPP65R110CFDA

OMO.#: OMO-IPP65R110CFDA-1190

New and Original
IPP65R190E6

Mfr.#: IPP65R190E6

OMO.#: OMO-IPP65R190E6-1190

MOSFET N-Ch 700V 20.2A TO220-3
IPP65R600E6XKSA1

Mfr.#: IPP65R600E6XKSA1

OMO.#: OMO-IPP65R600E6XKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 7.3A TO220
IPP65R074C6XKSA1

Mfr.#: IPP65R074C6XKSA1

OMO.#: OMO-IPP65R074C6XKSA1-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET N-Ch 700V 57.7A TO220-3
IPP65R190C6XKSA1

Mfr.#: IPP65R190C6XKSA1

OMO.#: OMO-IPP65R190C6XKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 20.2A TO220
Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of IPP65R110CFD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$5.68
$5.68
10
$4.83
$48.30
100
$4.18
$418.00
250
$3.97
$992.50
500
$3.56
$1 780.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
Top