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FF23MR12W1M1PB11BPSA1

FF23MR12W1M1PB11BPSA1
Mfr. #:
FF23MR12W1M1PB11BPSA1
Manufacturer:
Infineon Technologies
Description:
Discrete Semiconductor Modules
Lifecycle:
New from this manufacturer.
Datasheet:
FF23MR12W1M1PB11BPSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FF23MR12W1M1PB11BPSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
Discrete Semiconductor Modules
RoHS:
Y
Product:
Power MOSFET Modules
Type:
CoolSiC MOSFET
Vf - Forward Voltage:
4.6 V at 50 A
Vgs - Gate-Source Voltage:
- 10 V, 20 V
Mounting Style:
Screw Mount
Package / Case:
AG-EASY1BM-2
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Configuration:
Dual
Brand:
Infineon Technologies
Transistor Polarity:
N-Channel
Fall Time:
12 ns
Id - Continuous Drain Current:
50 A
Pd - Power Dissipation:
20 mW
Product Type:
Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:
22.5 mOhms
Rise Time:
10 ns
Factory Pack Quantity:
30
Subcategory:
Discrete Semiconductor Modules
Tradename:
EasyDUAL CoolSiC MOSFET
Typical Turn-Off Delay Time:
43.5 ns
Typical Turn-On Delay Time:
12 ns
Vds - Drain-Source Breakdown Voltage:
1200 V
Vgs th - Gate-Source Threshold Voltage:
3.45 V
Part # Aliases:
FF23MR12W1M1P_B11 SP002739444
Tags
FF2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V CoolSiC™ Modules
Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
Image Part # Description
FF23MR12W1M1B11BOMA1

Mfr.#: FF23MR12W1M1B11BOMA1

OMO.#: OMO-FF23MR12W1M1B11BOMA1

 Discrete Semiconductor Modules
FF23MR12W1M1PB11BPSA1

Mfr.#: FF23MR12W1M1PB11BPSA1

OMO.#: OMO-FF23MR12W1M1PB11BPSA1

 Discrete Semiconductor Modules
FF23MR12W1M1B11BOMA1

Mfr.#: FF23MR12W1M1B11BOMA1

OMO.#: OMO-FF23MR12W1M1B11BOMA1-INFINEON-TECHNOLOGIES

 MOSFET 2 N-CH 1200V 50A MODULE
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of FF23MR12W1M1PB11BPSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$98.89
$98.89
5
$97.07
$485.35
10
$92.71
$927.10
25
$89.61
$2 240.25
100
$83.44
$8 344.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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