IRG4PSC71UDPBF

Mfr. #:: IRG4PSC71UDPBF
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors 600V UltraFast 8-60kHz
Lifecycle:: New from this manufacturer.
Datasheet:: IRG4PSC71UDPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IRG4PSC71UDPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-274AA-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 2 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 85 A

Pd - Power Dissipation:: 350 W

Minimum Operating Temperature:: - 55 C

Packaging:: Tube

Height:: 20.3 mm

Length:: 15.6 mm

Width:: 5 mm

Brand:: Infineon Technologies

Product Type:: IGBT Transistors

Factory Pack Quantity:: 25

Subcategory:: IGBTs

Part # Aliases:: SP001545818

Unit Weight:: 0.240004 oz

Tags: IRG4PSC71UD, IRG4PSC71U, IRG4PSC, IRG4PS, IRG4P, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4PSC71UDPBF Description

***p One Stop Global: Trans IGBT Chip N-CH 600V 85A 350000mW 3-Pin(3+Tab) TO-274AA Tube

***ure Electronics: IRG4PSC71U Series 600 V 85 A Through Hole N-Channel UltraFast IGBT - TO-274AA

***ineon SCT: Copacked 600V IGBT in a TO-247AA package with ultrafast 8-60 kHz ultrafast, ultrasoft recovery anti-parallel diode, SUPER247-3COPAK, RoHS

***ment14 APAC: IGBT, 600V, 85A, TO-274AA; Transistor Type:IGBT; DC Collector Current:85A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Super-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:85A; Current Temperature:25°C; Fall Time Max:167ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:Super-247; Power Dissipation Max:350W; Power Dissipation Pd:350W; Power Dissipation Pd:350W; Pulsed Current Icm:200A; Rise Time:94ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail

***ource: Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail

***ure Electronics: SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264

***ment14 APAC: SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

***ical: Trans IGBT Chip N=-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: FGH40N60SMDF Series 600 V 80 A 92 ns Flange Mount Field Stop IGBT - TO-247

***el Electronic: FAIRCHILD SEMICONDUCTOR FGH40N60SMDF IGBT Single Transistor, General Purpose, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 Pins

***nell: IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:349W

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

***ow.cn: Trans IGBT Chip N-CH 600V 120A 375000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-2

*** Electronic Components: IGBT Transistors 600V 60A High Speed Trench Gate IGBT

***ark: Igbt, Single, 600V, 80A, To-247-3 Rohs Compliant: Yes

***r Electronics: Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel

***(Formerly Allied Electronics): IGBT Trench gate,600V 60A/100 deg,TO247

***nell: IGBT, SINGLE, 600V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pi

***et: STMICROELECTRONICS STGW60V60DF

***ernational Rectifier: 600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications

***p One Stop: Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRGP4063DPbF Series 600 V 48 A N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.14 V Current release time: 35 ns Power dissipation: 330 W

***ark: Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:96A; Collector Emitter Saturation Voltage, Vce(sat):2.14V; Power Dissipation, Pd:330W ;RoHS Compliant: Yes

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): IGBT with Ultrafast Soft Recovery Diode; Warp2 Series; 600 V; 22 A; TO-247AC

***ure Electronics: IRGP35B60PDPBF Series 600 V 34 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: 600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.85 V Current release time: 8 ns Power dissipation: 308 W

***ment14 APAC: IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:308W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-247AC; Power Dissipation Max:308W; Power Dissipation Pd:308W; Power Dissipation Pd:308W; Pulsed Current Icm:120A; Rise Time:6ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop: Trans IGBT Chip N-CH 600V 75A 390000mW 3-Pin(3+Tab) TO-247AC Tube

***eco: Transistor IGBT Chip Negative Channel 600 Volt 75A 3-Pin(3+Tab) TO-247AC

***ure Electronics: IRGP50 Series 600 V 45 A N-Channel IGBT w/ UltraFast Diode - TO-247AC

***(Formerly Allied Electronics): IGBT, with Ultrafast Soft Recovery Diode, 600 V, 33 A, TO-247AC

***ineon SCT: Copacked 600V Warp2 IGBT in a TO-247AC package with ultrafast switching frequency up to 150 kHz soft recovery diode, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2 V Current release time: 11 ns Power dissipation: 390 W

***ment14 APAC: IGBT, 600V, 75A, TO-247AC; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:75A; Device Marking:IRGP50B60PD1PbF; Package / Case:TO-247AC; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:150A; Rise Time:10ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

IRG4PSC71UDPBF More Information

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRG4PSC71UDPBF DISTI # V99:2348_13891852	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA Tube	75	1:$6.9566
IRG4PSC71UDPBF DISTI # V36:1790_13891852	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA Tube	0
IRG4PSC71UDPBF DISTI # IRG4PSC71UDPBF-ND	Infineon Technologies AG	IGBT 600V 85A 350W SUPER247 RoHS: Compliant Min Qty: 1 Container: Tube	498In Stock	1000:$9.0793 500:$9.8737 100:$11.0994 25:$12.5976 1:$14.3000
IRG4PSC71UDPBF DISTI # 32890866	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA Tube	1050	25:$10.9200
IRG4PSC71UDPBF DISTI # 27579147	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA Tube	196	40:$9.0585 2:$10.2861
IRG4PSC71UDPBF DISTI # 26694765	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA Tube	75	1:$6.9566
IRG4PSC71UDPBF DISTI # SP001545818	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA (Alt: SP001545818) RoHS: Compliant Min Qty: 1	Europe - 50	1000:€6.5900 500:€7.0900 100:€7.2900 50:€7.5900 25:€7.8900 10:€8.2900 1:€8.9900
IRG4PSC71UDPBF DISTI # IRG4PSC71UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA - Rail/Tube (Alt: IRG4PSC71UDPBF) RoHS: Compliant Min Qty: 75 Container: Tube	Americas - 0	750:$7.8900 375:$7.9900 225:$8.2900 150:$8.5900 75:$8.8900
IRG4PSC71UDPBF DISTI # IRG4PSC71UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA - Bulk (Alt: IRG4PSC71UDPBF) RoHS: Compliant Min Qty: 45 Container: Bulk	Americas - 0	450:$7.0900 225:$7.1900 135:$7.4900 90:$7.7900 45:$8.0900
IRG4PSC71UDPBF DISTI # IRG4PSC71UDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA (Alt: IRG4PSC71UDPBF) RoHS: Compliant Min Qty: 1000	Asia - 0	50000:$7.8937 25000:$7.9949 10000:$8.0987 5000:$8.2053 3000:$8.4270 2000:$8.6611 1000:$8.9086
IRG4PSC71UDPBF DISTI # 63J7557	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 85A 3-Pin(3+Tab) TO-274AA - Bulk (Alt: 63J7557) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0
IRG4PSC71UDPBF DISTI # 63J7557	Infineon Technologies AG	SINGLE IGBT, 600V, 85A,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.95V,Power Dissipation Pd:350W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	215	500:$9.4900 250:$10.1500 100:$10.6800 50:$11.3900 25:$12.1100 10:$12.6400 1:$13.7500
IRG4PSC71UDPBF	Infineon Technologies AG	IRG4PSC71U Series 600 V 85 A Through Hole N-Channel UltraFast IGBT - TO-274AA RoHS: Compliant	1748Tube	1:$12.2800 5:$10.1800 10:$9.4000 25:$8.4500 50:$7.8000
IRG4PSC71UDPBF DISTI # 942-IRG4PSC71UDPBF	Infineon Technologies AG	IGBT Transistors 600V UltraFast 8-60kHz RoHS: Compliant	31	1:$13.6100 10:$12.5100 25:$11.9900 100:$10.5700 250:$10.0500 500:$9.4000
IRG4PSC71UDPBF	International Rectifier	Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, TO-274AA RoHS: Compliant	398	1000:$7.3600 500:$7.7400 100:$8.0600 25:$8.4100 1:$9.0500
IRG4PSC71UDPBF	International Rectifier	* FREE SHIPPING ORDERS OVER $100 *	3	3:$11.5290 1:$12.3525
IRG4PSC71UDPBF DISTI # IRG4PSC71UDPBF	Infineon Technologies AG	Transistor: IGBT,600V,85A,350W,SUPER247	17	1:$13.0800 3:$11.7300 10:$9.9800 25:$9.1800
IRG4PSC71UDPBF DISTI # 8650764	Infineon Technologies AG	IGBT, 600V, 85A, TO-274AA RoHS: Compliant	3306	1000:$13.2500 500:$14.4600 250:$15.4600 100:$16.2500 25:$18.4400 10:$19.2300 1:$20.9300
IRG4PSC71UDPBF DISTI # 8650764	Infineon Technologies AG	IGBT, 600V, 85A, TO-274AA	2924	100:£8.2200 50:£8.7800 10:£9.3300 5:£10.6000 1:£11.0900
IRG4PSC71UDPBF	International Rectifier	RoHS: Compliant	Europe - 425
IRG4PSC71UDPBF DISTI # IGBT1783	Infineon Technologies AG	IGBT-TO-274 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	75:$9.3200 225:$9.1600 300:$8.6100
IRG4PSC71UDPBF DISTI # IRG4PSC71UDPBF	Infineon Technologies AG	600V 85A 350W TO274AA RoHS: Compliant	59	1:€8.4200 10:€7.4200 50:€6.8200 100:€6.5100

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IRG4PSC71UDPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes