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IPU80R2K4P7AKMA1

IPU80R2K4P7AKMA1
Mfr. #:
IPU80R2K4P7AKMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPU80R2K4P7AKMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPU80R2K4P7AKMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
IPAK-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
2.5 A
Rds On - Drain-Source Resistance:
2 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
7.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
22 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Series:
CoolMOS P7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
30 ns
Product Type:
MOSFET
Rise Time:
10 ns
Factory Pack Quantity:
1500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
IPU80R2K4P7 SP001644612
Tags
IPU80R2, IPU80, IPU8, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 2.4 Ohm 8 nC CoolMOS™ Power Mosfet - IPAK
***i-Key
MOSFET N-CH 800V 2.5A TO251-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 2.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 2.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:22W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 2,5A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:2.5A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:22W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Part # Mfg. Description Stock Price
IPU80R2K4P7AKMA1
DISTI # V36:1790_18190398		Infineon Technologies AG800V CoolMOS P7 Power Transistor0
    IPU80R2K4P7AKMA1
    DISTI # V99:2348_18190398    		Infineon Technologies AG800V CoolMOS P7 Power Transistor0
      IPU80R2K4P7AKMA1
      DISTI # IPU80R2K4P7AKMA1-ND      		Infineon Technologies AGMOSFET N-CH 800V 2.5A TO251-3
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		1439In Stock
      • 1000:$0.3985
      • 500:$0.4981
      • 100:$0.6724
      • 10:$0.8720
      • 1:$1.0000
      IPU80R2K4P7AKMA1
      DISTI # SP001644612      		Infineon Technologies AGLOW POWER_NEW (Alt: SP001644612)
      RoHS: Compliant
      Min Qty: 75      		Europe - 1500
      • 75:€0.4179
      • 150:€0.3419
      • 300:€0.3139
      • 450:€0.2899
      • 750:€0.2689
      IPU80R2K4P7AKMA1
      DISTI # IPU80R2K4P7AKMA1      		Infineon Technologies AGLOW POWER_NEW - Bulk (Alt: IPU80R2K4P7AKMA1)
      Min Qty: 1042
      Container: Bulk      		Americas - 0
      • 1042:$0.3019
      • 1044:$0.2909
      • 2086:$0.2809
      • 5210:$0.2709
      • 10420:$0.2659
      IPU80R2K4P7AKMA1
      DISTI # IPU80R2K4P7AKMA1      		Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPU80R2K4P7AKMA1)
      RoHS: Compliant
      Min Qty: 1500
      Container: Tube      		Americas - 0
      • 1500:$0.3259
      • 3000:$0.3139
      • 6000:$0.3029
      • 9000:$0.2919
      • 15000:$0.2869
      IPU80R2K4P7AKMA1
      DISTI # 24AC9062      		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes0
      • 1000:$0.3630
      • 500:$0.4080
      • 100:$0.4530
      • 10:$0.7020
      • 1:$0.8400
      IPU80R2K4P7AKMA1
      DISTI # 726-IPU80R2K4P7AKMA1      		Infineon Technologies AGMOSFET
      RoHS: Compliant      		300
      • 1:$0.8400
      • 10:$0.7020
      • 100:$0.4530
      • 1000:$0.3630
      IPU80R2K4P7AKMA1Infineon Technologies AGInfineon CoolMOS™ N-Channel Power MOSFETIPU80R2K4P7 - TO251
      RoHS: Compliant      		1500
      • 1000:$0.2800
      • 500:$0.2900
      • 100:$0.3000
      • 25:$0.3200
      • 1:$0.3400
      IPU80R2K4P7AKMA1
      DISTI # 2771340      		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, TO-251
      RoHS: Compliant      		0
      • 1000:$0.5920
      • 500:$0.7400
      • 100:$0.9990
      • 10:$1.3000
      • 1:$1.4900
      IPU80R2K4P7AKMA1
      DISTI # 2771340      		Infineon Technologies AGMOSFET, N-CH, 800V, 2.5A, TO-251
      RoHS: Compliant      		0
      • 500:£0.3090
      • 250:£0.3330
      • 100:£0.3560
      • 25:£0.5610
      • 5:£0.6200
      Image Part # Description
      IPU80R2K0P7AKMA1

      Mfr.#: IPU80R2K0P7AKMA1

      OMO.#: OMO-IPU80R2K0P7AKMA1

      		 MOSFET
      IPU80R2K4P7AKMA1

      Mfr.#: IPU80R2K4P7AKMA1

      OMO.#: OMO-IPU80R2K4P7AKMA1

      		 MOSFET
      IPU80R2K8CEBKMA1

      Mfr.#: IPU80R2K8CEBKMA1

      OMO.#: OMO-IPU80R2K8CEBKMA1

      		 MOSFET N-Ch 800V 1.9A IPAK-3
      IPU80R2K4P7AKMA1

      Mfr.#: IPU80R2K4P7AKMA1

      OMO.#: OMO-IPU80R2K4P7AKMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 800V 2.5A TO251-3
      IPU80R2K8CEAKMA1

      Mfr.#: IPU80R2K8CEAKMA1

      OMO.#: OMO-IPU80R2K8CEAKMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 800V TO251-3
      IPU80R2K0P7

      Mfr.#: IPU80R2K0P7

      OMO.#: OMO-IPU80R2K0P7-1190

      		 New and Original
      IPU80R2K0P7AKMA1

      Mfr.#: IPU80R2K0P7AKMA1

      OMO.#: OMO-IPU80R2K0P7AKMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 800V 3A TO251-3
      IPU80R2K8CE(SP001100622)

      Mfr.#: IPU80R2K8CE(SP001100622)

      OMO.#: OMO-IPU80R2K8CE-SP001100622--1190

      		 New and Original
      IPU80R2K8CEBKMA1 , 2SJ22

      Mfr.#: IPU80R2K8CEBKMA1 , 2SJ22

      OMO.#: OMO-IPU80R2K8CEBKMA1-2SJ22-1190

      		 New and Original
      IPU80R2K8CEBKMA1

      Mfr.#: IPU80R2K8CEBKMA1

      OMO.#: OMO-IPU80R2K8CEBKMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-Ch 800V 1.9A IPAK-3
      Availability
      Stock:
      300
      On Order:
      2283
      Enter Quantity:
      Current price of IPU80R2K4P7AKMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.84
      $0.84
      10
      $0.70
      $7.02
      100
      $0.45
      $45.30
      1000
      $0.36
      $363.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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