IPU80R2K0P7AKMA1

IPU80R2K0P7AKMA1
Mfr. #:
IPU80R2K0P7AKMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPU80R2K0P7AKMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPU80R2K0P7AKMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
IPAK-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
1.7 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
9 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
24 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Series:
CoolMOS P7
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
1500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
IPU80R2K0P7 SP001634912
Tags
IPU80R2, IPU80, IPU8, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
Part # Mfg. Description Stock Price
IPU80R2K0P7AKMA1
DISTI # V36:1790_18190397
Infineon Technologies AGLOW POWER_NEW22500
  • 1000:$0.3771
  • 500:$0.4769
  • 100:$0.5390
  • 10:$0.7698
  • 1:$0.8922
IPU80R2K0P7AKMA1
DISTI # V99:2348_18190397
Infineon Technologies AGLOW POWER_NEW1400
  • 1000:$0.3771
  • 500:$0.4769
  • 100:$0.5390
  • 10:$0.7698
  • 1:$0.8922
IPU80R2K0P7AKMA1
DISTI # IPU80R2K0P7AKMA1-ND
Infineon Technologies AGMOSFET N-CH 800V 3A TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube
1411In Stock
  • 6000:$0.3518
  • 3000:$0.3703
  • 1500:$0.3967
  • 100:$0.6083
  • 25:$0.7404
  • 10:$0.7800
  • 1:$0.8700
IPU80R2K0P7AKMA1
DISTI # 27003541
Infineon Technologies AGLOW POWER_NEW22500
  • 20:$0.8922
IPU80R2K0P7AKMA1
DISTI # 26600979
Infineon Technologies AGLOW POWER_NEW1400
  • 18:$0.8922
IPU80R2K0P7AKMA1
DISTI # SP001634912
Infineon Technologies AGPower MOSFET N-Channel 800V 3A 3-Pin TO-251 Tube (Alt: SP001634912)
RoHS: Compliant
Min Qty: 75
Container: Tube
Europe - 1500
  • 750:€0.2989
  • 450:€0.3219
  • 300:€0.3489
  • 150:€0.3809
  • 75:€0.4659
IPU80R2K0P7AKMA1
DISTI # IPU80R2K0P7AKMA1
Infineon Technologies AGPower MOSFET N-Channel 800V 3A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU80R2K0P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube
Americas - 0
  • 15000:$0.3199
  • 9000:$0.3249
  • 6000:$0.3369
  • 3000:$0.3489
  • 1500:$0.3619
IPU80R2K0P7AKMA1
DISTI # IPU80R2K0P7AKMA1
Infineon Technologies AGPower MOSFET N-Channel 800V 3A 3-Pin TO-251 Tube - Bulk (Alt: IPU80R2K0P7AKMA1)
Min Qty: 1087
Container: Bulk
Americas - 0
  • 10870:$0.2919
  • 5435:$0.2969
  • 3261:$0.3069
  • 2174:$0.3189
  • 1087:$0.3309
IPU80R2K0P7AKMA1
DISTI # 24AC9061
Infineon Technologies AGMOSFET, N-CH, 800V, 3A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes236
  • 1000:$0.3820
  • 500:$0.4840
  • 100:$0.5470
  • 10:$0.7130
  • 1:$0.8280
IPU80R2K0P7AKMA1
DISTI # 726-IPU80R2K0P7AKMA1
Infineon Technologies AGMOSFET
RoHS: Compliant
170
  • 1:$0.8200
  • 10:$0.7060
  • 100:$0.5420
  • 500:$0.4790
  • 1000:$0.3780
IPU80R2K0P7AKMA1Infineon Technologies AG 
RoHS: Not Compliant
1500
  • 1000:$0.3000
  • 500:$0.3200
  • 100:$0.3300
  • 25:$0.3500
  • 1:$0.3700
IPU80R2K0P7AKMA1
DISTI # 2771339
Infineon Technologies AGMOSFET, N-CH, 800V, 3A, TO-251246
  • 500:£0.3470
  • 250:£0.3700
  • 100:£0.3920
  • 10:£0.5120
  • 1:£0.5950
IPU80R2K0P7AKMA1
DISTI # 2771339
Infineon Technologies AGMOSFET, N-CH, 800V, 3A, TO-251
RoHS: Compliant
236
  • 6000:$0.5280
  • 3000:$0.5540
  • 1500:$0.5940
  • 100:$0.9100
  • 25:$1.1100
  • 10:$1.1700
  • 1:$1.3000
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Availability
Stock:
160
On Order:
2143
Enter Quantity:
Current price of IPU80R2K0P7AKMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.82
$0.82
10
$0.71
$7.06
100
$0.54
$54.20
500
$0.48
$239.50
1000
$0.38
$378.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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